SE10060A

SE10060A N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline Surface Mount Device  Features For a single MOSFET   VDS = 100V RDS(ON) = 14mΩ @ VGS=10V Pin configurations See Diagram below TO-220 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation Continuous Symbol Rating Units VDS 100 V VGS ±20 V 1,2,3 ID Pulsed @TA=25℃ 60 A 200 PD 170 W Single-pulse avalanche energy4 EAS 580 mJ Operating Junction Temperature Range TJ -55 to 150 ℃ Thermal Resistance Symbol RθJA Parameter Junction to Ambient ShangHai Sino-IC Microelectronic Co., Ltd. Min Typ Units 0.88 ℃/W 1. SE10060A Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 100V, VGS=0V IGSS Gate-Body Leakage Current VGS=20 V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=40A Forward Transconductance VDS= 25V, ID=28A gFS 100 2 V 1 μA 100 nA 3 4 V 14 17 mΩ 32 S DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1MHz 3400 pF 260 pF 210 pF 94 nC 16 nC 24 nC 15 ns 52 ns SWITCHING PARAMETERS 2 Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VDD=30V, td(off) Turn-Off Delay Time ID=2A, RGEN=2.5Ω td(r) Turn-On Rise Time 11 ns td(f) Turn-Off Fall Time 13 ns VDD=30V, VGS=10V, ID=30A VGS=10V, Source-Drain Characteristics Symbol Parameter VSD Diode forward voltage IS Diode forward current Test Condition VGS=0V, IS=100A 7 Trr Reverse recovery time Qrr Reverse recovery charge7 ShangHai Sino-IC Microelectronic Co., Ltd. Min Typ Max Units 0.85 1.2 V 60 A TJ=25℃,IF=28A 33 ns di/dt=100A/μs 54 nC 2. SE10060A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE10060A ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE10060A Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 5. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 6.