PDP3960

PDP3960 30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This BVDSS RDSON ID 30V 3m 176A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the  30V, 176A, RDS(ON) =3mΩ@VGS = 10V avalanche and commutation mode. These devices are  Improved dv/dt capability well suited for high efficiency fast switching applications.  Fast switching  100% EAS Guaranteed  Green Device Available TO220 Pin Configuration D Applications  MB / VGA / Vcore  POL Applications nd  SMPS 2 SR G G DS S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Rating Units VDS Symbol Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V Drain Current – Continuous (TC=25℃) 176 A Drain Current – Continuous (TC=100℃) 111 A Drain Current – Pulsed 704 A 180 mJ 60 A 168 W ID IDM EAS Parameter 1 Single Pulse Avalanche Energy IAS 2 Single Pulse Avalanche Current 2 Power Dissipation (TC=25℃) PD Power Dissipation – Derate above 25℃ 1.34 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 0.74 ℃/W Potens semiconductor corp. Ver.1.0.2 1 PDP3960 30V N-Channel MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.03 --- V/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA VGS=±20V , VDS=0V --- --- ±100 nA VGS=10V , ID=30A --- 2.4 3 m VGS=4.5V , ID=15A --- 3.2 4 m 1.2 1.6 2.5 V --- -5 --- mV/℃ --- 16 --- S --- 40 75 --- 6 12 --- 19 35 --- 20 40 VDD=15V , VGS=10V , RG=1 --- 32 60 ID=1A --- 75 130 --- 28 55 --- 4800 8000 --- 735 1300 --- 420 800 --- 1.6 3.5  Min. Typ. Max. Unit --- --- 176 A --- --- 352 A On Characteristics RDS(ON) VGS(th) △VGS(th) gfs 3 Static Drain-Source On-Resistance Gate Threshold Voltage VGS(th) Temperature Coefficient Forward Transconductance VGS=VDS , ID =250uA VDS=10V , ID=2A Dynamic Characteristics Qg Qgs Qgd Td(on) Tr Td(off) Tf Total Gate Charge 3,4 Gate-Source Charge 3,4 VDS=15V , VGS=4.5V , ID=24A 3,4 Gate-Drain Charge Turn-On Delay Time 3,4 3,4 Rise Time Turn-Off Delay Time Fall Time 3,4 3,4 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=25V , VGS=0V , F=1MHz VGS=0V, VDS=0V, F=1MHz nC ns pF Drain-Source Diode Characteristics Symbol IS ISM Parameter Continuous Source Current Pulsed Source Current 3 3 Conditions VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VDS=30V,IS=1A , di/dt=100A/µs --- 49 85 ns Qrr Reverse Recovery Charge TJ=25℃ --- 18 35 nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=60A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Potens semiconductor corp. Ver.1.0.2 2 PDP3960 TC , Case Temperature (℃) Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Normalized Vth vs. TJ Fig.5 Fig.4 Qg , Gate Charge (nC) Gate Charge Waveform ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) Fig.3 Fig.2 TJ , Junction Temperature (℃) Normalized RDSON vs. TJ VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 Normalized On Resistance (m) ID , Continuous Drain Current (A) 30V N-Channel MOSFETs Square Wave Pulse Duration (s) Normalized Transient Impedance Fig.6 Potens semiconductor corp. VDS , Drain to Source Voltage (V) Maximum Safe Operation Area Ver.1.0.2 3 PDP3960 30V N-Channel MOSFETs VDS EAS= 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS IAS 10% VGS Td(on) Tr Ton Fig.7 Td(off) VDD Tf Toff Switching Time Waveform VGS Fig.8 Potens semiconductor corp. EAS Waveform Ver.1.0.2 4 PDP3960 30V N-Channel MOSFETs TO220 PACKAGE INFORMATION Symbol A A1 A2 A3 B C C1 D E G H K L M N T DIA Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN 10.300 9.700 0.406 0.382 8.840 8.440 0.348 0.332 1.250 1.050 0.049 0.041 5.300 5.100 0.209 0.201 16.200 15.400 0.638 0.606 4.680 4.280 0.184 0.169 1.500 1.100 0.059 0.043 1.000 0.600 0.039 0.024 3.800 3.400 0.150 0.134 9.300 8.700 0.366 0.343 0.600 0.400 0.024 0.016 2.700 2.100 0.106 0.083 13.600 12.800 0.535 0.504 1.500 1.100 0.059 0.043 2.590 2.490 0.102 0.098 W0.35 Φ1.5 TYP. W0.014 deep0.2 TYP. Potens semiconductor corp. Φ0.059 TYP. deep0.008 TYP. Ver.1.0.2 5