SE60210GA

Dec 2014 SE60210GA N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. l High density cell design for ultra low RDS(ON) l Excellent package for good heat dissipation For a single MOSFET l l l VDS = 60V RDS(ON) = 2.2mΩ @ VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 210 ID Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. A 800 PD 300 W TJ -55 to 175 ℃ 1. SE60210GA Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 48V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V Gate Threshold Voltage VDS= VGS, ID=250μA VGS(th) RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A 60 2.0 V 1 μA 100 nA 3.0 4.0 V 2.2 2.6 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=30V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 7070 pF 2140 pF 63 pF 85 nC 24 nC 14 nC SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=10V, VDS=30V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=30V, 36 ns td(off) Turn-Off Delay Time RGEN=10Ω 95 ns td(r) Turn-On Rise Time 62 ns td(f) Turn-Off Fall Time 34 ns ID=20A Thermal Resistance Symbol RθJC Parameter Typ Units Junction to Case 0.5 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 2. SE60210GA Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE60210GA Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE60210GA Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 5.