SE10030A

SE10030A N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through For a single MOSFET   VDS = 100V RDS(ON) = 25mΩ @ VGS=10V FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ID 30 A 70 PD 75 W TJ -55 to 175 ℃ Thermal Resistance Symbol RθJC Parameter Thermal Resistance Junction to Case ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 2.0 ℃/W 1. SE10030A Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS=100V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 2 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A - Forward Transconductance VDS=5V, ID=10A gFS 100 V 1 μA 100 nA 3 4 V 25 29 mΩ 15 S 2000 pF 300 pF 250 pF 39 nC 8 nC 12 nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=10V, VDS=50V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=50V, 7 ns td(off) Turn-Off Delay Time RGEN=3Ω 29 ns td(r) Turn-On Rise Time 7 ns td(f) Turn-Off Fall Time 7 ns ShangHai Sino-IC Microelectronic Co., Ltd. ID=18A 2. SE10030A Test Circuits and Waveform ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE10030A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE10030A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE10030A Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 6. SE10030A The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 7.