SE100130A

SE100130A N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline Surface Mount Device  Features For a single MOSFET   VDS = 100V RDS(ON) = 3.0mΩ @ VGS=10V Pin configurations See Diagram below TO-220 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current Continuous Pulsed ID Single Pulse Avalanche Energy Total Power Dissipation @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. 130 500 A 1100 mJ PD 285 W TJ -55 to 150 ℃ 1. SE100130A Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V IDSS Drain to Source Leakage Current VDS= 100V, VGS=0V IGSS Gate-Body Leakage Current VGS= 20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=40A 3.0 Forward Transconductance VDS=5V, ID=20A 75 S 3650 pF 290 pF 88 pF 56 nC 14 nC 18 nC gFS 100 V 1.0 1 μA 100 nA 3.0 V 4.0 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=50V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz SWITCHING PARAMETERS 2 Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=50V, 17 ns td(off) Turn-Off Delay Time RGEN=3Ω, 57 ns td(r) Turn-On Rise Time 40 ns td(f) Turn-Off Fall Time 37 ns VGS=10V, VDS=50V, ID=65A REVERSE DIODE Diode Continuous Forward Current TC=25℃ VSD Diode Forward Voltage VDS=0V,IF=20V, 0.9 Trr Reverse Recovery Time VR=50V, IF=IS 50 ns Qrr Reverse Recovery Charge dI/dT=500A/us 255 nC IS ShangHai Sino-IC Microelectronic Co., Ltd. 20 A 1.2 V 2. SE100130A Test Circuits and Waveform ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE100130A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE100130A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE100130A Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 6. SE100130A The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 7.