SE18NS65A

Apr 2015 SE18NS65A N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through For a single MOSFET   VDS = 650V RDS(ON) = 160mΩ @ VGS=10V FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below TO-220 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 20 65 A PD 150 W TJ -55 to 150 ℃ 1. SE18NS65A Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V IDSS Drain to Source Leakage Current VDS=650V, VGS=0V IGSS Gate-Body Leakage Current VGS=30V VGS(th) RDS(ON) Gate Threshold Voltage VDS= VGS, ID=250μA Static Drain-Source On-Resistance 2 650 V 2.0 VGS=10V, ID=10A 160 1 μA 100 nA 4.0 V 190 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=100V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 1505 pF 68 pF 2.1 pF 36.5 nC 8.7 nC 12.5 nC SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=10V, VDS=480V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=400V, 38 ns td(off) Turn-Off Delay Time RGEN=20Ω 170 ns td(r) Turn-On Rise Time ID=5A 39 ns td(f) Turn-Off Fall Time 47 ns ID=10A Thermal Resistance Symbol Parameter Min Typ Units RθJC Junction to Case 0.6 ℃/W RθJA Junction to Ambient (t≦10s) 62 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 2. SE18NS65A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE18NS65A ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE18NS65A ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE18NS65A ShangHai Sino-IC Microelectronic Co., Ltd. 6. SE18NS65A Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 7. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 8.