SW4N65

SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features       TO-220F High ruggedness Low RDS(ON) (Typ 2Ω)@VGS=10V Low Gate Charge (Typ 18nC) Improved dv/dt Capability 100% Avalanche Tested Application: Charger,TV-POWER 1 2 TO-251N 1 3 3 SOT-82 TO-252 1 2 1 TO-251S TO-251M TO-251U 2 1 3 TO-263 BVDSS : 650V ID 1 2 3 TO-220 2 : 4A RDS(ON) : 2Ω 3 TO-251MQ 2 1 2 1 2 3 General Description 1 3 2 1 3 2 1 3 2 3 3 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item 1 2 3 4 5 6 7 8 9 10 Sales Type SW F 4N65D SW N 4N65D SW SI 4N65D SW MI 4N65D SW UI 4N65D SW D 4N65D SW S 4N65D SW B 4N65D SW P 4N65D SW MQI 4N65D Marking SW4N65D SW4N65D SW4N65D SW4N65D SW4N65D SW4N65D SW4N65D SW4N65D SW4N65D SW4N65D Package TO-220F TO-251N TO-251S TO-251M TO-251U TO-252 SOT-82 TO-263 TO-220 TO-251MQ Packaging TUBE TUBE TUBE TUBE TUBE REEL TUBE TUBE TUBE TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed (note 1) Gate to source voltage Single pulsed avalanche energy (note2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) TSTG, TJ Derating factor above 25oC Operating junction temperature & storage temperature TL Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. Value TO251N/S/M/U&TO252& TO220F SOT82 TO263 TO220 TO-251MQ 650 4* 2.5* 16 ± 30 246 15 5 23 101 145 156 167 0.19 0.81 1.16 1.25 1.33 Unit V A A A V mJ mJ V/ns W W/oC -55 ~ + 150 oC 300 oC *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient Value TO251N/S/M/U&TO252& TO220F SOT82 TO263 TO220 TO-251MQ 5.36 1.24 0.86 0.80 0.75 49 66 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 81 61 Jun. 2018. Rev. 11 Unit oC/W oC/W 1/8 SW4N65D Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 650 V V/oC 0.48 VDS=650V, VGS=0V 1 uA VDS=520V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 V 2.6 Ω On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=2A 2 Forward transconductance VDS=30V, ID=2A 3.8 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Qg Rising time Turn off delay time 758 VGS=0V, VDS=25V, f=1MHz 69 pF 8 15 VDS=325V, VGS=10V, ID=4A, RG=25Ω (note 4,5) 26 ns 43 Fall time 26 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance 18 VDS=520V, VGS=10V, ID=4A (note 4,5) 4 nC 8 VDS=0V, Scan F mode Ω 3.2 Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 4 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 16 A Diode forward voltage drop. IS=4A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=4A, VGS=0V, dIF/dt=100A/us 398 ns 2.1 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 30.8mH, IAS = 4A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 4A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2018. Rev. 11 2/8 SW4N65D Fig. 1. On-state characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 2. Transfer Characteristics Fig. 4. On-state current vs. diode forward voltage Fig. 6. On-resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2018. Rev. 11 3/8 SW4N65D Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area（TO-220F） Fig. 11. Maximum safe operating area（SOT-82） Fig. 8. Capacitance Characteristics Fig. 10. Maximum safe operating area（TO-251N &TO-251S&TO-251M&TO-251U&TO-252&TO-251MQ） Fig. 12. Maximum safe operating area（TO-263） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2018. Rev. 11 4/8 SW4N65D Fig. 13. Maximum safe operating area（TO-220） Fig. 14. Transient thermal response curve （TO-220F） Fig. 15. Transient thermal response curve（TO-251N&TO-251S&TO-251M& TO-251U&TO-252&TO-251MQ） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2018. Rev. 11 5/8 SW4N65D Fig. 16. Transient thermal response curve （SOT-82） Fig. 17. Transient thermal response curve （TO-263） Fig. 18. Transient thermal response curve （TO-220） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2018. Rev. 11 6/8 SW4N65D Fig. 19. Gate charge test circuit & waveform Fig. 20. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 21. Unclamped Inductive switching test circuit & waveform Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2018. Rev. 11 7/8 SW4N65D Fig. 22. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Same type as DUT 10VGS Diode reverse current VDD *. dv/dt controlled by RG *. Is controlled by pulse period Diode recovery dv/dt VDS (DUT) VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTE R. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2018. Rev. 11 8/8