HY045N10P

HY045N10P/B N-Channel Enhancement Mode MOSFET Feature Description  Pin Description 100V/120A RDS(ON)= 4.2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications  Switch application  DC/DC Converter N-Channel MOSFET Ordering and Marking Information Package Code P B HY045N10 HY045N10 YYXXXJWW G YYXXXJWW G P:TO-220FB-3L B:TO-263-2L Date Code YYXXX WW Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this product and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY045N10P/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature 175 °C -55 to 175 °C Tc=25°C 120 A Tc=25°C 480 A Tc=25°C 120 A Tc=100°C 81 A Tc=25°C 221 W Tc=100°C 110 W TJ TSTG IS Storage Temperature Range Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case** 0.68 °C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W EAS SinglePulsed-Avalanche Energy *** 662 mJ * ** *** L=0.3mH Repetitive rating；pulse width limited by max.junction temperature. Drain current is limited by junction temperature Limited by TJmax , starting TJ=25°C, L = 0.3mH, VD= 80V, VGS =10V. Electrical Characteristics(Tc =25°C Unless OtherwiseNoted) Symbol Parameter Test Conditions HY045N10 Unit Min Typ. Max VGS=0V,IDS=250μA 100 - - V VDS=100V,VGS=0V - - 1 μA - - 5 μA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* TJ=55°C Gate Threshold Voltage VDS=VGS, IDS=250μA 2 3 4 V Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA Drain-Source On-State Resistance VGS=10V,IDS=50A - 4.2 5.0 mΩ ISD=50A,VGS=0V - 0.9 1.2 V - 53 - ns - 107 - nC Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=50A,dISD/dt=100A/μs 2 V1.0 HY045N10P/B Electrical Characteristics (Cont.) (Tc =25°CUnless Otherwise Noted) Symbol Parameter Test Conditions HY045N10 Min Typ. Max - 1.9 - - 4452.2 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance VGS=0V,VDS=0V,F=1 MHz VGS=0V, Coss Output Capacitance VDS=25V, - 2842.0 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 174.6 - td(ON) Turn-on Delay Time - 20 - Tr Turn-on Rise Time VDD=40V,RG=4Ω, - 34 - td(OFF) Turn-off Delay Time IDS=50A,VGS=10V - 53 - - 23 - - 67.5 - - 15.0 - - 18.2 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =80V, VGS=10V, ID=30A nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com 3 V1.0 HY045N10P/B Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-CaseTemperature(℃) Tc-CaseTemperature(℃) Thermal Zθjc ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(Ω) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) www.hymexa.com ID-Drain Current(A) 4 V1.0 HY045N10P/B Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V) Figure 10: Gate Charge Characteristics C-Capacitance(pF) VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics VDS-Drain-Source Voltage (V) www.hymexa.com QG-Gate Charge (nC) 5 V1.0 HY045N10P/B Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Gate Charge Test Circuit and Waveforms www.hymexa.com 6 V1.0 HY045N10P/B Device Per Unit Package Type Unit Quantity TO-220FB-3L TO-263-2L Tube Tube 50 50 Package Information TO-220FB-3L www.hymexa.com 7 V1.0 HY045N10P/B TO-263-2L www.hymexa.com 8 V1.0 HY045N10P/B Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 9 V1.0 HY045N10P/B Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Thickness