SE100130GA

SE100130GA N-Channel Enhancement-Mode MOSFET Revision: A Features General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.  High density cell design for ultra low RDS(ON)  Excellent package for good heat dissipation For a single MOSFET   VDS = 100V RDS(ON) = 4mΩ @ VGS=10V Pin configurations See Diagram below TO-220 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current1 Total Power Dissipation Continuous Pulsed @TA=25℃ 100 ID A 390 PD 176 W Operating Junction Temperature Range TJ -55 to 175 ℃ Avalanche Energy, Single Pulsed EAS 400 mJ Thermal Resistance Symbol RθJC Parameter Junction to Case ShangHai Sino-IC Microelectronic Co., Ltd. Min Typ Units 0.85 ℃/W 1. SE100130GA Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 100V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance Transconductance gFS 100 V 1 μA 100 nA 2.8 4.0 V VGS=10V, ID=20A 4 5 mΩ VDS=5V, ID=20A 75 S 3650 pF 290 pF 88 pF 56 nC 14 nC 18 nC 2 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS 2 Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=50V, 17 ns td(off) Turn-Off Delay Time RGEN=10Ω 57 ns td(r) Turn-On Rise Time 40 ns td(f) Turn-Off Fall Time 37 ns VGS=10V, VDS=50V, ID=20A REVERSE DIODE Diode Continuous Forward Current TC=25℃ VSD Diode Forward Voltage VDS=0V,IF=20V, 0.9 Trr Reverse Recovery Time VR=50V, IF=IS 50 ns Qrr Reverse Recovery Charge dI/dT=500A/us 255 nC IS ShangHai Sino-IC Microelectronic Co., Ltd. 20 A 1.2 V 2. SE100130GA Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE100130GA Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE100130GA Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE100130GA The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 6.