8070.0

GOFORD 8070 Features Applications z VDSS=80V／VGSS=±25V／ID=88A RDS(ON)=11mΩ(Max.)@VGS=10V z Avalanche Rated z Reliable and Rugged z Advanced trench process technology z High Density Cell Design For Ultra Low On-Resistance z z Pin Description TO-252 Synchronous Rectification Power Management in Inverter System Switching Time Test Circuit and Waveforms TO-220 HTTP://www.gofordsemi.com TEL 0755-29961262 FAX 0755-29961466 Page 1 GOFORD 8070 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS Parameter Drain-Source Voltage Gate –Source Voltage TC=100°C ID Continuous Drain Current IDP IS 300us Pulsed Drain Current Tested Diode Continuous Forward Current EAS Single PulseAvalanche Energy TJ TSTG Operating Junction Temperature Storage Temperature Range TC=25°C Typical 80 ±25 50 88 280 70 Unit V V A A A A 550 mJ 175 -55 ~ 175 °C °C Electrical Characteristics (TA=25°C Unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA Min. Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current 1 RDS(on) Drain-Source On-Resistance Diode Characteristics VSD1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics2 RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Gate Charge Characteristics2 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Max. Unit 80 ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coe IDSS Typ V 0.073 VDS=-24V,VGS=0V TJ=85°C VDS=VGS,ID=-250uA VGS=±25V, VDS=0V VGS=10V, ID=40A 2 3 7 ISD=20A,VGS=0V ISD=40A, dISD/dt=100A/us 0.8 50 90 VGS=0V, VDS=0V, Frequency=1MHz 1.3 VGS=0V, VDS=30V Frequency=1MHz VDD=30V,RL=30Ω ID=1A,VGEN=10V RG=6Ω VDS=40V,VGS=10V ID=40A 1 30 4 ±100 11 1.3 uA V nA mΩ V ns nC Ω 3000 350 250 22 14 58 25 4200 77 22 23 108 pF 40 25 104 45 ns nC Note: 1: Pulse test ; pulse width ≦ 300ns, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. HTTP://www.gofordsemi.com TEL 0755-29961262 FAX 0755-29961466 Page 2 GOFORD 8070 Typical Characteristics HTTP://www.gofordsemi.com TEL 0755-29961262 FAX 0755-29961466 Page 3 GOFORD 8070 Typical Characteristics (Cont.) HTTP://www.gofordsemi.com TEL 0755-29961262 FAX 0755-29961466 Page 4 GOFORD 8070 Typical Characteristics (Cont.) HTTP://www.gofordsemi.com TEL 0755-29961262 FAX 0755-29961466 Page 5