KIA75NF75

KIA 80A，80V N-CHANNEL MOSFET 75NF75 SEMICONDUCTORS 1. Features n RDS(ON)=7mΩ@VGS=10V n Lead free and green device available n Low Rds-on to minimize conductive loss n High avalanche current 2. Applications n n Power supply DC-DC converters 3. Pin configuration 1 of 7 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.1 JAN 2014 KIA 80A，80V N-CHANNEL MOSFET 75NF75 SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol Maximum Units Drain-source voltage VDSS 80 V Gate-source voltage VGSS +25 V 80 A 70 A IDP4 340 A Avalanche current IAS5 20 A Avalanche energy EAS5 410 mJ 240 W 100 W TJ,TSTG -55～175 ºC Symbol Typical Units Thermal resistance-junction to case Rθjc 0.52 Thermal resistance-junction to ambient Rθja 55 Continuous drain current TC=25 ºC TC=100 ºC TC=25 ºC Pulse drain current ID3 TC=25 ºC Maximum power dissipation TC=100 ºC Junction & storage temperature range PD 5. Thermal characteristics Parameter 2 of 7 ºC/W Rev 1.1 JAN 2014 KIA 80A，80V N-CHANNEL MOSFET 75NF75 SEMICONDUCTORS 6. Electrical characteristics Parameter (TA=25°C,unless otherwise noted) Min Typ Max Unit Symbol Conditions BVDSS VGS=0V,IDS=250μA 80 - - VDS=64V,VGS=0V - - 1 - - 100 Static characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Drain-source on-state resistance IDSS TJ=125 ºC V μA VGS(th) VDS=VGS, IDS=250μA 2 3 4 V IGSS VGS=+25V,VDS=0V - - +100 nA RDS(on)1 VGS=10V,IDS=40A - 7 9 mΩ VSD1 ISD=40A,VGS=0V - - 1.3 V - - 80 A - 25 - nS - 18.5 - nC - 1.3 - Ω - 3110 - - 445 - Diode characteristics Diode forward voltage Diode continuous forward current IS3 Reverse recovery time trr Reverse recovery charge Qrr IF=40A,dl/dt=100A/μs Dynamic characteristics 2 Gate resistance RG Input capacitance Ciss VGS=0V, VDS=0V,F=1MHz VGS=0V, VDS=25V, F=1.0MHz Output capacitance Coss Reverse transfer capacitance Crss - 270 - Turn-on delay time td(ON) - 20.4 - - 63 - 67 - - 43 - - 76 - - 9.5 - Turn-on rise time tr Turn-off delay time td(OFF) Turn-off fall time Gate charge characteristics Total gate charge Gate-source charge VDD=37.5V,ID=40A, VGS=10V,RG=6.8Ω tf pF nS 2 Qg VDS=37.5V, VGS=10V, ID=40A, Qgs nC Gate-drain charge Qgd 40 Note:1. Pulse test; pulse width ≤300μs, duty cycle ≤2%. 2.Guaranteed by design,not subject to production testing. 3.Package limitation current is 50A. Calculated continuous current based on maximum allowable junction temperature. 4.Repetitive rating, pulse width limited by max junction temperature. 5.Starting TJ=25 ºC, L=1mH,IAS=40A. 3 of 7 Rev 1.1 JAN 2014 KIA 80A，80V N-CHANNEL MOSFET 75NF75 SEMICONDUCTORS 7.Test circuits and waveforms 4 of 7 Rev 1.1 JAN 2014 KIA 80A，80V N-CHANNEL MOSFET 75NF75 SEMICONDUCTORS 5 of 7 Rev 1.1 JAN 2014 KIA 80A，80V N-CHANNEL MOSFET 75NF75 SEMICONDUCTORS 6 of 7 Rev 1.1 JAN 2014 KIA 80A，80V N-CHANNEL MOSFET 75NF75 SEMICONDUCTORS 7 of 7 Rev 1.1 JAN 2014