SE100P60A

SE100P60 P-Channel Enhancement-Mode MOSFET General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline Surface Mount Device  Revision: A Features For a single MOSFET   VDS = -100V RDS(ON) =36mΩ @ VGS=-10V Pin configurations See Diagram below TO-263 TO-220 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±25 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID -60 -240 A PD 188 W TJ -55 to 150 ℃ 1. SE100P60 Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=-250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= -100V, VGS=0V IGSS Gate-Body Leakage Current VGS= 25V VGS(th) Gate Threshold Voltage VDS= VGS, ID=-250μA -2 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-60A - Forward Transconductance VDS=-50V, ID=-10A 5 gFS -100 V 36 -1 μA 100 μA -4 V 45 mΩ S DYNAMIC PARAMETERS Ciss Input Capacitance 4200 pF Coss Output Capacitance 615 pF Crss Reverse Transfer Capacitance 380 pF Qg Total Gate Charge 90 nC Qgs Gate Source Charge 15 nC Qgd Gate Drain Charge 35 nC td(on) Turn-On Delay Time VGS=-10V, VDS=-50V, 27 ns td(off) Turn-Off Delay Time RGEN=6Ω, 145 ns td(r) Turn-On Rise Time 83 ns td(f) Turn-Off Fall Time 40 ns VGS=0V, VDS=-50V, f=1MHz SWITCHING PARAMETERS 2 VGS=-10V, VDS=-80V, ID=-60A Thermal Resistance Symbol RθJC Parameter Junction to Case ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 1.25 ℃/W 2. SE100P60 Test Circuits and Waveform ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE100P60 Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE100P60 Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE100P60 Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 6. SE100P60 Package Outline Dimension TO-263 ShangHai Sino-IC Microelectronic Co., Ltd. 7. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 8.