KIA2906A

KIA 130A，60V N-CHANNEL MOSFET 2906A SEMICONDUCTORS 1. Features n RDS(on)=5.5mΩ@ VGS=10V n Lead free and green device available n Low Rds-on to minimize conductive loss n High avalanche current 2. Applications n Power Supply n UPS n Power Tool 3.Symbol 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.2 Jun. 2016 KIA 130A，60V N-CHANNEL MOSFET 2906A SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol Rating To-220 Units To-247 Drain-source voltage VDSS 60 V Gate-source voltage VGSS +25 V Junction and storage temperature range TSTG -55 to175 ºC 130 A Continuous drain current TC=25ºC 90 A IDP4 360 A Avalanche current IAS5 25 A Maximum power dissipation EAS5 250 mJ Pulse drain current TC=100ºC ID3 TC=25ºC Maximum power dissipation TC=25 ºC TC=100ºC PD 200 300 W 90 150 W 5. Thermal characteristics Parameter Symbol Rating Unit Thermal resistance,Junction-ambient RθJA 62.5 ºC/W Thermal resistance,Junction-case RθJC 0.735 ºC/W 2 of 6 Rev 1.2 Jun. 2016 KIA 130A，60V N-CHANNEL MOSFET 2906A SEMICONDUCTORS 6. Electrical characteristics Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Drain-source on-state resistance Gate resistance Diode forward voltage (TA=25°C,unless otherwise noted) Min Typ Max Units Symbol Test Conditions BVDSS VGS=0V,IDS=250μA 60 - - VDS=48V, VGS=0V - - 1 TJ=125°C - - 30 VGS(th) VDS=VGS, ID=250μA 2 3 4 V IGSS VGS=+25V, VDS=0V - - +100 nA RDS(on)1 VGS=10V,ID=50A - 5.5 7 mΩ Rg VDS=0V, VGS=0V,f=1MHz - 1.2 - Ω VSD1 ISD=50A, VGS=0V - 0.88 1.3 V - - 50 A IDSS V μA Diode continuous forward current IS3 Reverse recovery time trr ISD=70A,VDD=50V, - 15.2 - nS Reverse recovery charge Qrr dlSD/dt=100A/μs - 6.16 - nC Input capacitance Ciss - 3100 - Output capacitance Coss - 926 - Reverse transfer capacitance Crss - 451 - Turn-on delay time td(on) - 20 - Rise time Turn-off delay time Fall time VDS=25V,VGS=0V, f=1MHz tr VDD=30V, ID=70A, - 83.7 - td(off) RG=25Ω,VGS=10V - 108 - - 92.6 - - 66.34 - - 12.35 -- - 33.52 -- tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=50V, VGS=10V ID=70A Note:1. Pulse test; pulse width