SE85210GA

SE85210 N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through For a single MOSFET   VDS = 85V RDS(ON) = 3.0mΩ @ VGS=10V FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below TO-263 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 85 V Gate-Source Voltage VGS ±20 V Drain Current Continuous Pulsed Single Pulse Avalanche Energy Total Power Dissipation @TC=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 210 850 A EAS 2200 mJ PD 310 W TJ -55 to 150 ℃ 1. SE85210 Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS=100V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=40A - Forward Transconductance VDS=10V, ID=20A 35 gFS 85 V 1 μA 200 nA 3.2 3.8 V 3.0 3.8 mΩ S DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=25V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 11000 pF 914 pF 695 pF 250 nC 48 nC 98 nC SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=10V, VDS=60V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=38V, 23 ns td(off) Turn-Off Delay Time RGEN=1.2Ω 130 ns td(r) Turn-On Rise Time ID=40A 190 ns td(f) Turn-Off Fall Time 120 ns ID=40A Thermal Resistance Symbol RθJC Parameter Thermal Resistance Junction to Case(t≤10s) ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 0.4 ℃/W 2. SE85210 Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE85210 Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE85210 Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE85210 Package Outline Dimension TO-263 ShangHai Sino-IC Microelectronic Co., Ltd. 6. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 7.