HP60N75

BVDSS = 70 V RDS(on) = 18 mΩ HP60N75 ID = 60 A 70V N-Channel MOSFET TO-220 FEATURES ‰ Originative New Design 1 ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25୅ unless otherwise specified Parameter Value Units 70 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25୅) 60 A Drain Current – Continuous (TC = 100୅) 35 A IDM Drain Current – Pulsed 200 A VGS Gate-Source Voltage ρ20 V EAS Single Pulsed Avalanche Energy (Note 2) 490 mJ IAR Avalanche Current (Note 1) 60 A EAR Repetitive Avalanche Energy (Note 1) 12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25୅) - Derate above 25୅ 120 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.8 W/୅ -55 to +155 ୅ 300 ୅ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθCS Case-to-Sink RθJA Junction-to-Ambient Typ. Max. -- 1.24 0.5 -- -- 62.5 Units ୅/W HP60N75 July 2005 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units V On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.0 -- 4.0 Static Drain-Source On-Resistance VGS = 10 V, ID = 15 A -- 0.013 0.018 VGS = 0 V, ID = 250 Ꮃ 70 -- -- V ID = 250 Ꮃ, Referenced to25୅ -- 0.06 -- V/୅ VDS = 70 V, VGS = 0 V -- -- 1 Ꮃ VDS = 48 V, TC = 150୅ -- -- 10 Ꮃ Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 Ꮂ IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 Ꮂ -- 2670 Ꮔ -- 252 Ꮔ 160 Ꮔ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 30 V, VGS = 0 V, f = 1.0 MHz -- Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 30 V, ID = 60 A, RG = 25 Ω (Note 4,5) VDS = 30 V, ID = 15 A, VGS = 10 V (Note 4,5) Gate-Drain Charge -- 15 40 Ꭸ -- 105 220 Ꭸ -- 60 130 Ꭸ -- 65 140 Ꭸ -- 55 -- 10 -- nC -- 15 -- nC nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 50 ISM Pulsed Source-Drain Diode Forward Current -- -- 200 VSD Source-Drain Diode Forward Voltage IS = 60 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time -- 52 -- Ꭸ Qrr Reverse Recovery Charge IS =60 A, V GS = 0 V diF/dt = 100 A/μs (Note 4) -- 75 -- μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=230μH, IAS=50A, VDD=25V, RG=25:, Starting TJ =25qC 3. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature A HP60N75 Electrical Characteristics TC=25 qC HP60N75 ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics RDS(ON)[Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] Figure 2. Transfer Characteristics ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 2000 Coss 1500 ୔ Note ; 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 VDS = 30V VGS, Gate-Source Voltage [V] Capacitances [pF] 2500 10 VDS = 48V 8 6 4 2 ୔ Note : ID = 50 A 0 -1 10 0 0 10 1 10 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 50 HP60N75 Typical Characteristics (continued) 2.5 RDS(ON), (Normalized) 1.0 * Note : 1. VGS = 0 V 0.9 Drain-Source On-Resistance 1.1 2.0 1.5 1.0 Note : 0.5 1. VGS = 10 V 2. ID = 25 A 2. ID = 250 PA 0.0 -100 0.8 -100 -50 0 50 100 150 -50 0 50 100 150 200 o 200 TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 60 3 10 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 50 100 Ps 2 10 1 ms 10 ms 100 ms DC 1 10 * Notes : o 1. TC = 25 C 40 30 20 10 o 2. TJ = 175 C 3. Single Pulse 0 25 0 10 -1 0 10 1 10 2 10 10 50 75 100 125 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 0 10 D=0.5 * Notes : o 1. ZTJC(t) = 1.24 C/W Max. 0.2 2. Duty Factor, D=t1/t2 0.1 3. TJM - TC = PDM * ZTJC(t) -1 10 0.05 PDM 0.02 0.01 t1 single pulse -2 10 -5 10 -4 10 150 o TC, Case Temperature [ c] VDS, Drain-Source Voltage [V] Zθ JC(t), Thermal Response ID, Drain Current [A] BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 -3 10 -2 10 -1 10 t2 0 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 1 10 175 HP60N75 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time HP60N75 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD HP60N75 Package Dimension {vTYYWGOhP 9.90±0.20 20 0. ± 60 4.50±0.20 . 6.50±0.20 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 φ3 0.80±0.20 2.54typ 2.54typ 0.50±0.20 HP60N75 {vTYYWGOiP ±0.20 0 .2 ±0 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 4 .8 3 φ 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20