KNP9120A

KIA 40A 200V N-CHANNEL MOSFET 9120A SEMICONDUCTORS 1. Features n Proprietary New Planar Technology n RDS(ON)=50m Ω(typ.)@VGS=10V n Low Gate Charge Minimize Switching Loss n Fast Recovery Body Diode 2. Application n DC-DC Converters n DC-AC Inverters for UPS n SMPS and Motor controls 3. Pin configuration 1 of 8 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.0 MAR 2017 KIA 40A 200V N-CHANNEL MOSFET 9120A SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KNP9120A TO-220 KIA 5. Absolute maximum ratings (TC= 25ºC , unless otherwise specified) Parameter Drain-source voltage[1] Gate-source voltage Continuous Drain Current Continuous Drain Current @Tc=100ºC Pulsed Drain Current at VGS=10V[2] Avalanche energy Single pulse Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25 ºC Maximum Temperature for Soldering Leads at 0.063in(1.6mm) form Case for 10 Seconds Storage temperature Symbol Rating Units VDSS VGSS ID ID @ TC=100ºC IDM EAS dv/dt[3] 200 ±20 40 V V A Figure3 A Figure6 1200 5.0 125 1.0 A mJ V/ns W W/ºC 300 260 ºC -55~+150 ºC PD TL TPAK TSTG Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. 6. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 of 8 Rating 1.0 62 Rev 1.0 MAR 2017 Unit ºC/W KIA 40A 200V N-CHANNEL MOSFET 9120A SEMICONDUCTORS 7. Electrical characteristics Parameter Off characteristics Drain-source breakdown voltage Symbol Drain-to-Source Leakage Current IDSS Gate-to-source Leakage Current IGSS Conditions Min Typ Max Unit (TJ=25°C,unless otherwise specified) VGS=0V,ID=250μA 200 V VDS=200V ,VGS=0V 1 μA VDS=160V , VGS=0V 100 μA TJ=125 ºC VGS=+20V, VDS=0V +100 nA VGS=-20V, VDS=0V -100 nA (TJ=25°C,unless otherwise specified) VDS=VGS, ID=250μA 2.0 4.0 V BVDSS On characteristics Gate threshold voltage VGS(TH) Static drain-source on-resistance RDS(ON) VgS=10V,ID=20A - 50 65 mΩ GFS VDS=15V,ID=20A - 65 - S Forward Transconductance[4] Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Switching characteristics Total gate charge Gate-source charge Gate-drain charge Switching characteristics Drain-source diode forward voltage Continuous drain-source current[4] Pulsed drain-source current[4] Reverse recovery time Reverse recovery charge (Essentially independent of operating temperature) CISS 2800 3700 pF VDS=25V,VGS=0V, COSS 305 400 pF f=1.0 MHz CRSS 110 150 pF tD(ON) 20 ns tR 30 ns VDD=100V,ID=20A, RG=3.9Ω,VGS=10V tD(OFF) 65 ns tF 25 ns (Essentially independent of operating temperature) 97 120 nC QG VDD=100V, QGS ID=20A 14 nC VGS=0 to10V QGD 39 nC (TJ=25°C,unless otherwise specified) VSD VGS=0V, IS=40A 1.5 V ISD 40 A Integral PN-diode in MOSFET ISM 160 A trr 280 ns VGS=0V,IF=20A diF/dt=100A/μs Qrr 420 μC NOTE:[1] TJ=+25ºC to +150ºC ; [2] Repetitive rating; pulse width limited by maximum junction temperature; [3] ISD= 20A di/dt < 100 A/μs, VDD < BVDSS, TJ=+150ºC; [4] Pulse width≤380μs; duty cycle≤2%. 3 of 8 Rev 1.0 MAR 2017 KIA 40A 200V N-CHANNEL MOSFET 9120A SEMICONDUCTORS 8.Test circuits and waveforms 4 of 8 Rev 1.0 MAR 2017 KIA 40A 200V N-CHANNEL MOSFET 9120A SEMICONDUCTORS 5 of 8 Rev 1.0 MAR 2017 KIA 40A 200V N-CHANNEL MOSFET 9120A SEMICONDUCTORS 6 of 8 Rev 1.0 MAR 2017 KIA 40A 200V N-CHANNEL MOSFET 9120A SEMICONDUCTORS 7 of 8 Rev 1.0 MAR 2017 KIA 40A 200V N-CHANNEL MOSFET 9120A SEMICONDUCTORS 8 of 8 Rev 1.0 MAR 2017