G120N04A

GOFORD G120N04A Description The G120N04A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) RDS(ON) ID 5.5 mΩ 3.2mΩ 120 A @ 4.5V(Typ) @10V (Typ) 40V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Marking and pin assignment Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-220 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS 40 V Gate-Source Voltage VGS ±20 V ID 120 A ID (100℃) 85 A Pulsed Drain Current IDM 330 A Maximum Power Dissipation PD 130 W 0.87 W/℃ EAS 1080 mJ TJ,TSTG -55 To 175 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 1 GOFORD G120N04A Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.15 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 45 - V Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.9 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 3.2 4.0 VGS=4.5V, ID=10A - 5.5 7.0 VDS=10V,ID=20A 26 - - S - 5400 - PF - 970 - PF - 380 - PF - 15 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS mΩ (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=20V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=20V,ID=2A,RL=1Ω - 18 - nS td(off) VGS=10V,RG=3Ω - 52 - nS - 23 - nS - 75 nC - 10.5 nC - 17 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=20V,ID=20A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time VGS=0V,IS=40A trr Reverse Recovery Charge Qrr Forward Turn-On Time ton - 1.2 V - - 120 A TJ = 25°C, IF = 40A - 42 - nS (Note3) - 45 - nC di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=20V,VG=10V,L=1mH,Rg=25Ω，IAS=46.5A HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 2 GOFORD G120N04A Test circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 3 GOFORD G120N04A ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) Vsd Source-Drain Voltage (V) ID- Drain Current (A) Figure 6 Source- Drain Diode Forward Figure 3 Rdson- Drain Current HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 4 GOFORD C Capacitance (pF) Power Dissipation (W) G120N04A TJ-Junction Temperature (℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 5