KIA
2.0A, 600V
N-CHANNEL MOSFET
2N60H
SEMICONDUCTORS
1.Description
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for
high voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
2. Features
n
RDS(ON)=4.1Ω@VGS=10V.
n
Low gate charge (typical 9nC)
n
High ruggedness
n
Fast switching capability
n
Avalanche energy specified
n
Improved dv/dt capability
3. Pin configuration
1 of 6
Pin
Function
1
Gate
2
Drain
3
Source
4
Drain
Rev 1.1 JAN 2014
2.0A, 600V
N-CHANNEL MOSFET
KIA
2N60H
SEMICONDUCTORS
4. Absolute maximum ratings
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current continuous
VDSS
VGSS
TC=25ºC
TC=100ºC
ID
Drain current pulsed (note1)
IDP
EAR
EAS
dv/dt
Repetitive (note1)
Single pulse (note2)
Peak diode recovery dv/dt (note3)
TC=25ºC
PD
Total power dissipation
Derate above 25ºC
Junction temperature
TJ
Storage temperature
TSTG
*Drain current limited by maximum junction temperature.
Avalanche Enlsed
(TC= 25ºC, unless otherwise noted)
Rating
Units
252/251
220
220F
600
V
±30
V
2.0*
2.0
2.0*
A
1.35*
1.35
1.35*
A
8*
8
8*
A
4.4
mJ
120
mJ
4.5
V/ns
44
55.5
23.6
W
0.35
0.44
0.19
W/ ºC
+150
ºC
-50~+150
ºC
5. Thermal characteristics
Parameter
Symbol
Rating
220
62.5
Unit
Thermal resistance,Junction-amient
RthJA
252/251
62.5
Thermal resistance,case-to-sink typ.
RthCS
--
0.5
--
ºC/W
Thermal resistance,Junction-case
RthJC
2.87
2.25
5.3
ºC/W
2 of 6
220F
62.5
ºC/W
Rev 1.1 JAN 2014
KIA
2.0A, 600V
N-CHANNEL MOSFET
2N60H
SEMICONDUCTORS
6. Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage Forward
current
Reverse
Breakdown voltage temperature
coefficient
On characteristics
Gate threshold voltage
Static drain-source on- resistance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source diode characteristics
drain-source diode forward voltage
Continuous drain-source current
Pulsed drain-source current
Reverse recovery time
Reverse recovery charge
(TC= 25 ºC, unless otherwise noted)
Test conditions
Min
Typ Max Unit
Symbol
BVDSS
VGS=0V,ID=250μA
VDS=600V, VGS=0V
VDS=480V, TC=125ºC
VGS=30V, VDS=0V
VGS=-30V,VDS=0V
600
-
-
1
10
100
-100
V
μA
μA
nA
nA
△BVDSS/△TJ
ID=250μA
-
0.7
-
V/ ºC
VGS(TH)
RDS(ON)
VDS= VGS ID=250μA
VGS=10V,ID=1.0A
2.0
-
4.1
4.0
5.0
V
Ω
CISS
COSS
CRSS
VDS=25V,VGS=0V,
f=1MHz
-
200
20
4
-
pF
pF
pF
-
10
25
25
30
9
1.5
4.0
-
ns
ns
ns
ns
nC
nC
nC
-
-
1.4
2.0
8.0
-
V
A
A
ns
μC
IDSS
IGSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VSD
ISD*
ISM*
tRR
QRR
VDD=300V,ID=2.0A,
RG=25Ω (note4,5)
VDS=480V,ID=2.0A
VGS=10V (note4,5)
VGS=0V,ISD=2.0A
ISD=2.0A
dISD/dt=100A/μs (note4)
230
1.0
Notes:1.repetitive rating:pulse width limited by maximum junction temperature
2.L=60mH,IAS=2.0A,VDD=50V,RG=25Ω,starting TJ=25ºC
3.ISD
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