PTP04N04A

PTP04N04A 40V N-Channel Planar MOSFET General Features BVDSS RDS(ON),typ. ID 40V 4.0mΩ 206A Proprietary New Planar Technology RDS(ON),typ.=4.0m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters Power Supply G D S Ordering Information Part Number PTP04N04A TO-220 Package TO-220 Brand Absolute Maximum Ratings Symbol Package No to Scale TC=25 Parameter VDSS Drain-to-Source Voltage[1] VGSS Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current[3] Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy ℃ unless otherwise specified PTP04N04A 40 Unit V ±20 206 80 480 1200 mJ Peak Diode Recovery dv/dt 5.0 V/ns 333 2 W W/ TL TPAK Power Dissipation Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds TJ& TSTG Operating and Storage Temperature Range ID IDM EAS dv/dt [3] ℃ PD 300 260 A ℃ ℃ -55 to 175 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient PTP04N04A Unit 0.45 ℃/W 62 ©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Page 1 / 9 Rev.B .2017 PTP04N04A Electrical Characteristics OFF Characteristics Symbol TJ =25 ℃ unless otherwise specified Parameter Min. Typ. Max. Unit BVDSS Drain-to-Source Breakdown Voltage 40 -- -- V -- -- 1 IDSS Drain-to-Source Leakage Current IGSS VGS=0V, ID=250uA VDS=40V, VGS=0V uA -- -- 100 -- -- +100 VDS=32V, VGS=0V, TJ =125 Gate-to-Source Leakage Current ℃ VGS=+20V, VDS=0V nA -- -- -100 ON Characteristics Symbol Test Conditions VGS=-20V, VDS=0V TJ =25 ℃ unless otherwise specified Min. Typ. Max. Unit Test Conditions RDS(ON) Parameter Static Drain-to-Source On-Resistance[4] -- 4.0 4.5 mΩ VGS=10V, ID=80A[5] VGS(TH) Gate Threshold Voltage 2.0 -- 4.0 V VDS=VGS, ID=250uA Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Min. Typ. Max. Ciss Input Capacitance -- 3840 -- Crss Reverse Transfer Capacitance -- 450 -- Coss Output Capacitance -- 1700 -- Rg Gate Series Resistance -- 1.1 -- Qg Total Gate Charge -- 96 -- Qgs Gate-to-Source Charge -- 18 -- Qgd Gate-to-Drain (Miller) Charge -- 38 -- Resistive Switching Characteristics Symbol Parameter Unit Test Conditions pF VGS=0V, VDS=25V, f=1.0MHZ Ω f=1.0MHZ nC VDD=20V, ID=80A, VGS=0 to 10V Essentially independent of operating temperature Min. Typ. Max. td(ON) Turn-on Delay Time -- 32 -- trise Rise Time -- 90 -- td(OFF) Turn-Off Delay Time -- 101 -- tfall Fall Time -- 70 -- Unit Test Conditions nS VDD=20V, ID=50A, VGS= 10V RG=10 Ω ©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Page 2 / 9 Rev.B .2017 PTP04N04A Source-Drain Body Diode Characteristics Symbol Parameter [4] ISD Continuous Source Current [4] TJ=25 ℃ unless otherwise specified Min Typ. Max. -- -- 206 ISM Pulsed Source Current -- -- 480 VSD trr Qrr Diode Forward Voltage Reverse recovery time Reverse recovery charge ---- -77 35.2 1.2 --- Unit Test Conditions A Integral PN-diode in MOSFET V ns nC IS=80A, VGS=0V VGS=0V ,IF=80A, diF/dt=100A/μs Note: ℃ ℃. [1] TJ=+25 to +175 [2] Silicon limited current only. [3] Package limited current. [4] Repetitive rating; pulse width limited by maximum junction temperature. [5] Pulse width≤380µs; duty cycle≤2%. ©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Page 3 / 9 Rev.B .2017 PTP04N04A Typical Characteristics ©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Page 4 / 9 Rev.B .2017 PTP04N04A Typical Characteristics ©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Page 5 / 9 Rev.B .2017 PTP04N04A Typical Characteristics ©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Page 6 / 9 Rev.B .2017 PTP04N04A Test Circuits and Waveforms Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms ©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Page 7 / 9 Rev.B .2017 PTP04N04A Test Circuits and Waveforms (Cont.) ©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Page 8 / 9 Rev.B .2017 PTP04N04A Disclaimers: Perfect Intelligent Power Semiconductor Co., Ltd (PIP) reserves the right to make changes without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to PIP’s terms and conditions supplied at the time of order acknowledgement. Perfect Intelligent Power Semiconductor Co., Ltd warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent PIP deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessarily performed. Perfect Intelligent Power Semiconductor Co., Ltd does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using PIP’s components. To minimize risk, customers must provide adequate design and operating safeguards. Perfect Intelligent Power Semiconductor Co., Ltd does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in PIP’s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. Perfect Intelligent Power Semiconductor Co., Ltd is not responsible or liable for such altered documentation. Resale of PIP’s products with statements different from or beyond the parameters stated by Perfect Intelligent Power Semiconductor Co., Ltd for that product or service voids all express or implied warrantees for the associated PIP’s product or service and is unfair and deceptive business practice. Perfect Intelligent Power Semiconductor Co., Ltd is not responsible or liable for any such statements. Life Support Policy: Perfect Intelligent Power Semiconductor Co., Ltd’s products are not authorized for use as critical components in life support devices or systems without the expressed written approval of Perfect Intelligent Power Semiconductor Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Page 9 / 9 Rev.B .2017