PTP11N08A

PTP11N08A 80V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] 80V 9.5mΩ 75A Proprietary New Trench Technology RDS(ON),typ.=9.5 mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter G D S TO-220 Ordering Information Part Number PTP11N08A Package TO-220 Package No to Scale Brand Absolute Maximum Ratings Symbol TC=25 Parameter ℃ unless otherwise specified PTP11N08A VDSS Drain-to-Source Voltage[1] VGSS ID ID @ Tc =100 IDM EAS Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current @ Tc=100 Pulsed Drain Current at VGS=10V[3] Single Pulse Avalanche Energy 80 Unit V ±20 75 60 300 1800 mJ Peak Diode Recovery dv/dt 5.0 V/ns 230 1.54 W W/ TL TPAK Power Dissipation Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds TJ& TSTG Operating and Storage Temperature Range ℃ dv/dt ℃ [2] [3] ℃ PD 300 260 A ℃ ℃ -55 to 175 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient PTP11N08A Unit 0.65 ℃/W 62 ©2020 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP . Page 1 / 9 Rev.B.2020 PTP11N08A Electrical Characteristics OFF Characteristics Symbol TJ =25 ℃ unless otherwise specified Parameter Min. Typ. Max. Unit BVDSS Drain-to-Source Breakdown Voltage 80 -- -- V -- -- 5 IDSS Drain-to-Source Leakage Current IGSS VGS=0V, ID=250uA VDS=80V, VGS=0V uA -- -- 100 -- -- +100 VDS=64V, VGS=0V, TJ =125 Gate-to-Source Leakage Current ℃ VGS=+20V, VDS=0V nA -- -- -100 ON Characteristics Symbol Test Conditions VGS=-20V, VDS=0V TJ =25 ℃ unless otherwise specified Min. Typ. Max. Unit Test Conditions RDS(ON) Parameter Static Drain-to-Source On-Resistance -- 9.5 11 mΩ VGS=10V, ID=40A [5] VGS(TH) Gate Threshold Voltage 2.0 -- 4.0 V VDS=VGS, ID=250uA gfs Forward Transconductance -- 126 -- S VDS=10V,ID=40A [5] Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Min. Typ. Max. Ciss Input Capacitance -- 2900 -- Crss Reverse Transfer Capacitance -- 350 -- Coss Output Capacitance -- 720 -- RG Gate Series Resistance -- 0.8 -- Qg Total Gate Charge -- 106 -- Qgs Gate-to-Source Charge -- 15 -- Qgd Gate-to-Drain (Miller) Charge -- 47 -- Resistive Switching Characteristics Symbol Parameter Unit Test Conditions pF VGS=0V, VDS=25V, f=1.0MHZ Ω f=1.0MHZ nC VDD=40V, ID=40A, VGS=0 to 10V Essentially independent of operating temperature Min. Typ. Max. td(ON) Turn-on Delay Time -- 20 -- trise Rise Time -- 60 -- td(OFF) Turn-Off Delay Time -- 55 -- tfall Fall Time -- 50 -- Unit Test Conditions ns VDD=40V, ID=40A, VGS= 10V RG=2.5Ω ©2020 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP . Page 2 / 9 Rev.B.2020 PTP11N08A Source-Drain Body Diode Characteristics Symbol Parameter [2] ISD Continuous Source Current [2] TJ=25 ℃ unless otherwise specified Min Typ. Max. -- -- 75 ISM Pulsed Source Current -- -- 300 VSD trr Qrr Diode Forward Voltage Reverse recovery time Reverse recovery charge ---- -133 137 1.5 --- Unit Test Conditions A Integral PN-diode in MOSFET V ns nC IS=75A, VGS=0V VGS=0V ,IF=75A, diF/dt=100A/µs Note: ℃ ℃ [1] TJ=+25 to +175 [2] Package limited current [3]. Silicon limited current only. [4] Repetitive rating; pulse width limited by maximum junction temperature. [5] Pulse width≤380µs; duty cycle≤2%. ©2020 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP . Page 3 / 9 Rev.B.2020 PTP11N08A Typical Characteristics ©2020 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP . Page 4 / 9 Rev.B.2020 PTP11N08A Typical Characteristics(Cont.) ©2020 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP . Page 5 / 9 Rev.B.2020 PTP11N08A Typical Characteristics(Cont.) VDD=40V ID=40A ©2020 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP . Page 6 / 9 Rev.B.2020 PTP11N08A Test Circuits and Waveforms Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms ©2020 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP . Page 7 / 9 Rev.B.2020 PTP11N08A Test Circuits and Waveforms (Cont.) ©2020 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP . Page 8 / 9 Rev.B.2020 PTP11N08A Disclaimers: Perfect Intelligent Power Semiconductor Co., Ltd (PIP) reserves the right to make changes without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to PIP’s terms and conditions supplied at the time of order acknowledgement. Perfect Intelligent Power Semiconductor Co., Ltd warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent PIP deems necessary to support this warrantee. 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Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ©2020 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP . Page 9 / 9 Rev.B.2020