IRF9530NPBF-VB

IRF9530NPBF www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) VGS = 10 V 167 V mΩ RDS(on) VGS = 4.5 V 178 mΩ ID -18 -100 VDS A Single Configuration TO-220AB • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters S G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS - 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc ID V - 18 - 13 IDM - 100 IAS - 10 EAS 31 PD Unit 11.7b 1.1 A mJ W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 60 Junction-to-Case (Drain) RthJC 9 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). 服务热线：400-655-8788 1 IRF9530NPBF www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 100 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage - 2.5 ± 250 VDS = - 60 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 50 VDS = - 100 V, VGS = 0 V, TJ = 150 °C - 250 VDS - 10 V, VGS = - 10 V RDS(on) gfs nA -1 VDS = - 100 V, VGS = 0 V, TJ = 125 °C ID(on) V - 18 µA A VGS = - 10 V, ID = - 14 A 167 VGS = - 4.5 V, ID = - 12 A 178 VDS = - 20 V, ID = - 14 A 20 mΩ S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec 330 67 VDS = - 20 V, VGS = - 10 V, ID = - 14 A Rise Timec Fall Timec f = 1 MHz td(on) tr c td(off) 100 nC 13.5 14 Rg Turn-On Delay Timec pF 280 Qgd Gate Resistance Turn-Off Delay Time 1460 VGS = 0 V, VDS = - 20 V, f = 1 MHz VDD = - 20 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.5 2.5 5 10 20 11 20 42 63 12 20 - 18 Pulsed Current ISM - 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 10 A, VGS = 0 V - 0.8 IF = - 10 A, dI/dt = 100 A/µs 40 trr IRM(REC) Qrr ns b IS Continuous Current  A - 1.5 V 38 57 ns 2.3 3.5 A 60 nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRF9530NPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.400 40 VGS = 10 V thru 4 V 0.350 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 30 20 10 VGS = 3 V 0.300 0.250 VGS = 4.5 V 0.200 VGS = 10 V 0.150 0 0 1 0.5 1.5 0 2 20 40 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Output Characteristics 80 100 On-Resistance vs. Drain Current 1.0 0.040 ID = 14 A 0.034 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 0.8 0.6 TC = 25 °C 0.4 0.2 TC = 125 °C TC = - 55 °C 0.7 1.4 0.016 2.1 2.8 0.010 2 3.5 4 6 8 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 50 10 TC = 25 °C ID = 14 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C 40 g fs - Transconductance (S) TJ = 125 °C 0.022 TJ = 25 °C 0 0 0.028 30 TC = 125 °C 20 10 8 VDS = 20 V 6 VDS = 10 V 4 VDS = 32 V 2 0 0 0 6 12 18 ID - Drain Current (A) Transconductance 24 30 0 14 28 42 56 70 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 IRF9530NPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.3 100 ID = 250 μA VGS(th) (V) IS - Source Current (A) 2.0 TJ = 150 °C 10 1.7 TJ = 25 °C 1 1.4 1.1 - 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 25 0 25 50 75 100 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 1900 125 150 125 150 51 ID = 250 μA VDS (V) Drain-to-Source Voltage C - Capacitance (pF) 1800 Ciss 1700 1600 800 Coss 49 47 45 Crss 43 - 50 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) 40 - 25 0 25 50 75 100 TJ - Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 2.2 40 VGS = 10 V 1.9 30 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) ID = 14 A 1.6 VGS = 4.5 V 1.3 20 10 1.0 0.7 - 50 0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 0 25 50 75 100 TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 150 服务热线：400-655-8788 4 IRF9530NPBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 IDAV (A) TJ = 150 °C ID - Drain Current (A) 20 TJ = 25 °C 10 100 μs 10 1 ms Limited by R DS(on)* 10 ms DC, 1 s, 100 ms 1 0.1 1 0.000001 TC = 25 °C Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 0.1 Time (s) Single Pulse Avalanche Current Capability vs. Time BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 IRF9530NPBF www.VBsemi.com TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) 服务热线：400-655-8788 6 IRF9530NPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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