STP30NF20-VB

STP30NF20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (:) 200 0.058at VGS = 10 V • • • • ID (A) 35 TrenchFET® Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT APPLICATIONS • Industrial TO-220AB D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °C c ID V 35 23 IDM 70 IAR 35 EAR 61 PD Unit A mJ b 300 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) RthJA 40 RthJC 0.5 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). 服务热线：400-655-8788 1 STP30NF20 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . VDS VDS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 30 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS a Forward Transconductance ± 250 VDS = 200 V, VGS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ = 125 °C 50 VDS = 200 V, VGS = 0 V, TJ = 175 °C 250 ID(on) Drain-Source On-State Resistancea 4 VDS 5 V, VGS = 10 V RDS(on) gfs 70 V nA µA A VGS = 10 V, ID = 20 A 0.058 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.130 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.170 VGS = 6 V, ID = 15 A 0.070 VDS = 15 V, ID = 20 A 70  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c Gate-Source Charge Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 2690 VGS = 0 V, VDS = 25 V, f = 1 MHz 200 pF 110 95 VDS = 100 V, VGS = 10 V, ID = 45 A Rg td(off) nC 28 34 f = 1 MHz 1.6 22 35 VDD = 100 V, RL = 2.78  ID  45 A, VGEN = 10 V, Rg = 2.5  220 330 40 60 145 220 td(on) tr 140 tf  ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 45 Pulsed Current ISM 70 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 45 A, VGS = 0 V trr IRM(REC) Qrr IF = 45 A, di/dt = 100 A/µs A 1 1.5 V 150 225 ns 12 18 A 0.9 2 µC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 STP30NF20 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS = 10 thru 7 V 5V 80 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 3V 0 2 4 6 8 40 TC = 125 °C 20 4V 0 60 25 °C - 55 °C 0 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 0.10 150 120 25 °C 90 RDS(on) - On-Resistance () g fs - Transconductance (S) TC = - 55 °C 125 °C 60 30 0.06 VGS = 10 V 0.04 0.02 0.00 0 0 10 20 30 40 50 0 60 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 3500 100 20 V GS - Gate-to-Source Voltage (V) 3000 C - Capacitance (pF) 0.08 Ciss 2500 2000 1500 1000 Crss 500 Coss 0 VDS = 100V ID = 45 A 16 12 8 4 0 0 40 80 120 160 200 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 150 180 服务热线：400-655-8788 3 STP30NF20 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V ID = 20 A 2.4 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.8 2.0 1.6 1.2 TJ = 150 °C 10 TJ = 25 °C 0.8 0.4 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 300 290 ID = 1.0 mA 280 I Dav (A) 10 V DS (V) IAV (A) at TA = 25 °C 1 270 260 250 240 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time 1 230 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 STP30NF20 www.VBsemi.com THERMAL RATINGS 100 50 10 I D - Drain Current (A) 40 I D - Drain Current (A) 10 µs *Limited by rDS(on) 30 20 10 100 µs 1 ms 1 10 ms, 100 ms, dc 0.1 TC = 25 °C Single Pulse 0.01 0.001 0 0 25 50 75 100 125 150 175 0.1 TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature 100 1 10 1000 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Case Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 STP30NF20 www.VBsemi.com TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES MAX. DIM. MIN. MAX. MIN. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 0.055 F 1.14 1.40 0.045 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 0.552 L 13.35 14.02 0.526 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 b Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C e J(1) e(1) D2 服务热线：400-655-8788 6 STP30NF20 Disclaimer www.VBsemi.com All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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