IRF4905PBF-VB

IRF4905PBF www.VBsemi.com P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS -60 RDS(on) VGS = 10 V 19 V mΩ RDS(on) VGS = 4.5 V 26 mΩ ID -50 A Single Configuration FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch TO-220AB S G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS - 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C - 46 ID -39 IDM - 200 Avalanche Current Pulse IAS - 45 EAS 101 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C 69 IS TC = 70 °C TA = 25 °C A 104.2a 66.7a PD W 3.1b 2b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range mJ a 20b TC = 25 °C Maximum Power Dissipation A -34 Pulsed Drain Current L = 0.1 mH V - 50 TA = 70 °C Single Pulse Avalanche Energy Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 33 40 Maximum Junction-to-Case Steady State RthJC 0.98 1.2 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. 服务热线：400-655-8788 1 IRF4905PBF www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs 68 ID = - 250 µA VGS(th) Temperature Coefficient V mV/°C - 5.2 -1 -3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 VDS =-5 V, VGS = - 10 V - 120 A VGS = - 10 V, ID = - 30 A 19 VGS = - 4.5 V, ID = - 20 A 26 VDS = - 15 V, ID = - 50 A µA mΩ 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 3700 VDS = - 25 V, VGS = 0 V, f = 1 MHz 290 VDS = - 30 V, VGS = - 10 V, ID = - 55 A VDS = - 30 V, VGS = - 4.5 V, ID = - 55 A tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz 115 38 60 16 nC VDD = - 2 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1   5.2 10 tf Fall Time 76 19 td(on) Turn-On Delay Time pF 390 15 7 15 70 110 40 60 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C - 69 A - 150 IS = - 30 A -1 - 1.5 V Body Diode Reverse Recovery Time trr 45 68 ns Body Diode Reverse Recovery Charge Qrr 59 120 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 29 16 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRF4905PBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 100 VGS = 10 thru 6 V 80 VGS = 5 V ID - Drain Current (A) ID - Drain Current (A) 160 120 80 VGS = 4 V 40 60 40 TC = 125 °C 20 TC = 25 °C VGS = 3 V TC = - 55 °C 0 0 0 1 2 3 4 VDS - Drain-to-SourceVoltage (V) 5 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 Output Characteristics 5 Transfer Characteristics 10 100 8 80 gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C 6 4 TC = 125 °C 2 TC = 25 °C 60 TC = 125 °C 40 20 TC = 25 °C TC = - 55 °C 0 0 0 1 2 3 4 0 5 24 36 ID - Drain Current (A) 12 VGS - Gate-to-Source Voltage (V) 60 Transconductance 0.05 5000 0.04 4000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 48 0.03 VGS = 4.5 V 0.02 Ciss 3000 2000 VGS = 10 V 0.01 1000 Coss 0.00 Crss 0 0 20 40 60 ID - Drain Current (A) 80 On-Resistance vs. Drain Current 100 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 60 Capacitance 服务热线：400-655-8788 3 IRF4905PBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 55 A 8 VDS = 20 V 6 VDS = 30 V 4 2 40 60 20 Qg - Total Gate Charge (nC) VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 0 0 ID = 20 A 1.7 80 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Gate-to-Source Voltage 0.10 100 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 20 A TJ = 25 °C 10 0.08 0.06 0.04 TJ = 150 °C 0.02 TJ = 25 °C 1 0.0 0.00 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 1000 75 ID = 10 mA 72 V(BR)DSS - (V) I Dav - (A) 100 10 69 66 IAV (A) at TJ = 25 °C 1 63 IAV (A) at TJ = 150 °C 0.1 0.0001 0.001 0.01 T in - (s) 0.1 1 Single Pulse Avalanche Current Capability vs. Time 60 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Drain-Source Breakdown Voltage vs. Junction Temperature 服务热线：400-655-8788 4 IRF4905PBF www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 0.8 50 ID - Drain Current (A) V GS(th) Variance (V) 0.5 ID = 250 µA ID = 1 mA 0.2 40 30 20 - 0.1 10 0 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature(°C) 125 25 0 150 Threshold Voltage 100 125 150 Max. Drain Current vs. Case Temperature 140 1000 Limited by RDS(on)* 120 10 µs 100 I D - Drain Current (A) 100 Power (W) 75 50 TC - Case Temperature (°C) 80 60 40 100 µs 10 1 ms 10 ms 100 ms, DC 1 20 BVDSS Limited TC = 25 °C Single Pulse 0 0 25 50 75 100 125 0.1 0.1 150 TJ - Temperature (°C) 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Power Derating, Junction-to-Case Safe Operating Area, Junction-to-Case 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case . 服务热线：400-655-8788 5 IRF4905PBF www.VBsemi.com TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) 服务热线：400-655-8788 6 IRF4905PBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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