HSP0048

HSP0048 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP0048 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Low RDS(ON) Low Gate Charge RoHs and Halogen-Free Compliant VDS 100 V RDS(ON),typ 6.6 mΩ ID 80 A TO220 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V Current 1,6 ID@TC=25℃ Continuous Drain 80 A ID@TC=100℃ Continuous Drain Current 1,6 70.7 A IDM Pulsed Drain Current2 350 A EAS Single Pulse Avalanche Energy3 61 mJ IAS Avalanche Current 35 A 188 W PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 58 ℃/W --- 0.8 ℃/W 1 HSP0048 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) IDSS Parameter Drain-Source Breakdown Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=250uA 100 --- --- Static Drain-Source On-Resistance 2 VGS=10V , ID=13.5A --- 6.6 9 Static Drain-Source On-Resistance 2 VGS=4.5V , ID=11.5A --- 8.7 12 VGS=VDS , ID =250uA 1.2 --- 3 VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 Gate Threshold Voltage Drain-Source Leakage Current m V uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 85 --- S Qg Total Gate Charge (10V) --- 45 --- Qg Total Gate Charge (4.5V) --- 19.3 --- Qgs Gate-Source Charge --- 9.5 --- Qgd Gate-Drain Charge --- 4.8 --- Td(on) Turn-On Delay Time VDS=50V , VGS=10V , ID=13.5A nC --- 10 --- Rise Time VDD=50V , VGS=10V , RG=3, --- 6.5 --- Turn-Off Delay Time ID=13.5A --- 45 --- Fall Time --- 7.5 --- Ciss Input Capacitance --- 3320 --- Coss Output Capacitance --- 605 --- Crss Reverse Transfer Capacitance --- 20 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 80 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.1 V Tr Td(off) Tf VDS=50V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current 1,5,6 Voltage 2 Conditions trr Reverse Recovery Time IF=13.5A , di/dt=100A/µs , --- 33 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 150 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.3mH,IAS=35A 4.The power dissipation is limited by junction temperature 5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. 6.The maximum current rating is package limited. www.hs-semi.cn Ver 2.0 2 HSP0048 N-Ch 100V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Source-Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.hs-semi.cn Ver 2.0 3 HSP0048 N-Ch 100V Fast Switching MOSFETs Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.11 Unclamped Inductive Switching Waveform Fig.10 Switching Time Waveform www.hs-semi.cn Ver 2.0 4