HSP4024A

HSP4024A N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSP4024A is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck VDS 40 V RDS(ON),max 3.3 mΩ ID 165 A converter applications. The HSP4024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l l l l l 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology TO220 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 V Continuous Drain Current, VGS @ 10V 1,6 165 A Continuous Drain Current, VGS @ 10V 1,6 100 A 250 A 125 mJ 50 A Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 4 PD@TC=25℃ Total Power Dissipation 149 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 62 ℃/W --- 0.84 ℃/W 1 HSP4024A N-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V VGS=10V , ID=30A --- 2.6 3.3 mΩ VGS=VDS , ID =250uA 2 --- 4.5 V VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 53 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.8 --- Ω Qg Total Gate Charge (10V) --- 65 --- Qgs Gate-Source Charge --- 24 --- Qgd Gate-Drain Charge --- 21 --- Turn-On Delay Time --- 26 --- Td(on) Tr Td(off) VDS=32V , VGS=10V , ID=20A Rise Time VDD=20V , VGS=10V , RG=3.3Ω, --- 38 --- Turn-Off Delay Time ID=30A --- 63 --- uA nC ns Fall Time --- 20 --- Ciss Input Capacitance --- 4711 --- Coss Output Capacitance --- 869 --- Crss Reverse Transfer Capacitance --- 367 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 165 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Tf VDS=15V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS Parameter Conditions 1,5 Continuous Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , --- 20.3 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 9.5 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=50A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.Package limitation current is 85A. www.hs-semi.cn Ver 2.0 2 HSP4024A N-Ch 40V Fast Switching MOSFETs Typical Characteristics Fig.2 On-Resistance vs. Gate-Source VGS Gate to Source Voltage (V) Fig.1 Typical Output Characteristics VDS=3 2V ID=20 QG , Total Gate Charge (nC) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized R DSON vs. TJ www.hs-semi.cn Ver 2.0 3 HSP4024A N-Ch 40V Fast Switching MOSFETs Capacitance (pF) Ciss Co Crs F=1.0MHz VDS , Drain to Source Voltage(V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% Td(on) Tr Ton Td(off) VDD IAS Tf VGS Toff Fig.10 Switching Time Waveform www.hs-semi.cn BVDSS BVDSS-VDD BVDSS 10% VGS 1 L x IAS2 x 2 Fig.11 Unclamped Inductive Switching Ver 2.0 4