HSP0016
N-Ch 100V Fast Switching MOSFETs
Description
Product Summary
The HSP0016 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The HSP0016 meet the RoHS and Green Product
VDS
100
V
RDS(ON),max
47
mΩ
ID
27
A
requirement, 100% EAS guaranteed with full
function reliability approved.
l
l
l
l
TO220 Pin Configuration
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
±20
V
Continuous Drain Current, VGS @ 10V
1
27
A
Continuous Drain Current, VGS @ 10V
1
17
A
Continuous Drain Current, VGS @ 10V
1
4.2
A
Continuous Drain Current, VGS @ 10V
1
3.3
A
54
A
36.5
mJ
Pulsed Drain Current
2
EAS
Single Pulse Avalanche Energy
IAS
Avalanche Current
3
27
A
87
W
2
W
PD@TC=25℃
Total Power Dissipation
4
PD@TA=25℃
Total Power Dissipation
4
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-ambient
RθJC
1
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Thermal Resistance Junction-Case
Ver 2.0
1
Max.
Unit
---
62
℃/W
---
1.44
℃/W
1
HSP0016
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
△VGS(th)
VGS(th) Temperature Coefficient
Typ.
Max.
Unit
100
---
---
V
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
VGS=10V , ID=20A
---
---
47
VGS=4.5V , ID=15A
---
---
50
1.0
---
2.5
V
mV/℃
VGS=0V , ID=250uA
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Min.
2
VGS=VDS , ID =250uA
---
-5.52
---
VDS=80V , VGS=0V , TJ=25℃
---
---
10
VDS=80V , VGS=0V , TJ=55℃
---
---
100
mΩ
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=20A
---
28.7
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.6
---
Ω
Qg
Total Gate Charge (10V)
---
60
---
Qgs
Gate-Source Charge
---
9.7
---
Qgd
Gate-Drain Charge
---
11.8
---
VDS=80V , VGS=10V , ID=20A
uA
nC
---
10.4
---
Rise Time
VDD=50V , VGS=10V , RG=3.3Ω
---
46
---
Turn-Off Delay Time
ID=20A
---
54
---
Fall Time
---
10
---
Ciss
Input Capacitance
---
3848
---
Coss
Output Capacitance
---
137
---
Crss
Reverse Transfer Capacitance
---
82
---
Min.
Typ.
Max.
Unit
---
---
27
A
---
---
54
A
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
Td(on)
Tr
Td(off)
Tf
Turn-On Delay Time
VDS=15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
IS
ISM
Parameter
Conditions
1,5
Continuous Source Current
Pulsed Source Current
2,5
2
VG=VD=0V , Force Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
IF=20A , dI/dt=100A/µs ,
---
30
---
nS
Qrr
Reverse Recovery Charge
TJ=25℃
---
37
---
nC
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=27A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
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Ver 2.0
2
HSP0016
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
37.0
55
ID=12A
VGS=10V
44
36.5
ID Drain Current (A)
VGS=7V
36.0
RDSON (mΩ)
VGS=5V
33
VGS=4.5V
35.5
22
35.0
VGS=3V
11
34.5
34.0
0
0
1
2
3
4
4
5
VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
6
VGS (V)
8
10
Fig.2 On-Resistance vs. Gate-Source
12
IS Source Current(A)
10
8
6
TJ=150℃
4
TJ=25℃
2
0
0.00
0.25
0.50
0.75
1.00
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.5
Normalized On Resistance
1.8
2.0
Normalized VGS(th) (V)
1.4
1.5
1
1.0
0.6
0.5
0.2
-50
0
50
100
150
TJ ,Junction Temperature (℃ )
Fig.5 Normalized VGS(th) vs. TJ
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-50
0
50
100
TJ , Junction Temperature (℃)
150
Fig.6 Normalized R DSON vs. TJ
Ver 2.0
3
HSP0016
N-Ch 100V Fast Switching MOSFETs
10000
100.00
F=1.0MHz
10us
100us
10.00
1000
ID (A)
Capacitance (pF)
Ciss
Coss
10ms
100ms
1.00
DC
100
0.10
Crss
TC=25℃
Single Pulse
10
0.01
1
5
9
13
17
21
25
0.1
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
1
10
100
VDS (V)
1000
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P DM
SINGLE
T ON
T
D = TON/T
TJpeak = TC+P DMXRθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=
VDS
90%
10%
VGS
Td(on)
Tr
Ton
Td(off)
BVDSS
BVDSS-VDD
BVDSS
VDD
IAS
Tf
VGS
Toff
Fig.10 Switching Time Waveform
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1
L x IAS2 x
2
Fig.11 Unclamped Inductive Switching
Ver 2.0
4
