HSP6016
N-Ch 60V Fast Switching MOSFETs
Description
Product Summary
The HSP6016 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON
VDS
60
V
and gate charge for most of the synchronous
RDS(ON),max
12
mΩ
ID
60
A
buck converter applications.
The HSP6016 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
l
l
l
l
l
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
TO220 Pin Configuration
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
±20
V
Continuous Drain Current, VGS @ 10V
1
60
A
Continuous Drain Current, VGS @ 10V
1
38
A
Continuous Drain Current, VGS @ 10V
1
9.2
A
Continuous Drain Current, VGS @ 10V
1
7.5
A
165
A
73
mJ
Pulsed Drain Current
2
EAS
Single Pulse Avalanche Energy
IAS
Avalanche Current
3
38
A
86.8
W
2
W
PD@TC=25℃
Total Power Dissipation
4
PD@TA=25℃
Total Power Dissipation
4
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
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Thermal Resistance Junction-Case
Ver 2.0
1
Max.
Unit
---
62
℃/W
---
1.44
℃/W
1
HSP6016
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
2
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
60
---
---
V
Reference to 25℃ , ID=1mA
---
0.052
---
V/℃
VGS=10V , ID=30A
---
---
12
VGS=4.5V , ID=15A
---
---
15
1.2
---
2.5
V
---
-5.76
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
---
---
1
VDS=48V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
42
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
---
Ω
Qg
Total Gate Charge (4.5V)
---
28.7
---
Qgs
Gate-Source Charge
---
10.5
---
Qgd
Gate-Drain Charge
---
9.9
---
Td(on)
VDS=48V , VGS=4.5V , ID=15A
nC
---
10.4
---
Rise Time
VDD=30V , VGS=10V , RG=3.3Ω,
---
9.2
---
Turn-Off Delay Time
ID=15A
---
63
---
Fall Time
---
4.8
---
Ciss
Input Capacitance
---
3240
---
Coss
Output Capacitance
---
210
---
Crss
Reverse Transfer Capacitance
---
146
---
Min.
Typ.
Max.
Unit
---
---
60
A
---
---
165
A
Tr
Td(off)
Tf
Turn-On Delay Time
uA
VDS=15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
IS
ISM
Parameter
Conditions
1,5
Continuous Source Current
Pulsed Source Current
2,5
VG=VD=0V , Force Current
VSD
Diode Forward Voltage
2
VGS=0V , IS=A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=15A , dI/dt=100A/µs ,
---
18
---
nS
Qrr
Reverse Recovery Charge
TJ=25℃
---
14
---
nC
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=38A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
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Ver 2.0
2
HSP6016
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
11.5
150
ID=12A
VGS=10V
11.0
VGS=7V
100
RDSON (mΩ)
ID Drain Current (A)
125
VGS=5V
VGS=4.5V
75
10.5
VGS=3V
50
10.0
25
0
9.5
0
1
2
3
4
VDS , Drain-to-Source Voltage (V)
5
4
Fig.1 Typical Output Characteristics
6
VGS (V)
8
10
Fig.2 On-Resistance v.s Gate-Source
12
IS Source Current(A)
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0.2
0.4
0.6
0.8
1
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
Normalized VGS(th)
1.5
1.5
1
1.0
0.5
0.5
0
-50
0
50
100
TJ ,Junction Temperature ( ℃)
-50
150
Fig.5 Normalized VGS(th) v.s TJ
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0
50
100
150
TJ , Junction Temperature (℃)
Fig.6 Normalized R DSON v.s TJ
Ver 2.0
3
HSP6016
N-Ch 60V Fast Switching MOSFETs
10000
1000.00
F=1.0MHz
Capacitance (pF)
10us
100us
100.00
Ciss
1000
10.00
ID (A)
Coss
100
10ms
100ms
DC
1.00
Crss
0.10
TC=25℃
Single Pulse
0.01
10
1
5
9
13
17
VDS Drain to Source Voltage(V)
21
0.1
25
Fig.7 Capacitance
1
10
100
VDS (V)
1000
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.3
0.1
0.1
0.05
PDM
T
0.02
D = TON/T
0.01
0.01
0.00001
TON
TJpeak = TC + PDM x RθJC
SINGLE PULSE
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=
VDS
90%
Td(on)
Tr
Ton
Td(off)
VDD
IAS
Tf
VGS
Toff
Fig.10 Switching Time Waveform
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BVDSS
BVDSS-VDD
BVDSS
10%
VGS
1
L x IAS2 x
2
Fig.11 Unclamped Inductive Switching
Ver 2.0
4
