10N50TF
10 Amps,500 Volts N-CHANNEL Power MOSFET
FEATURE
TO-220TF
10A,500V,RDS(ON)MAX=0.75Ω@VGS=10V/5A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
Halogen free
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Symbol
10N50TF
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
VGSS
±30
Continuous Drain Current
ID
10
Pulsed Drain Current(Note1)
IDM
40
Single Pulse Avalanche Energy (Note 2)
EAS
580
mJ
dv/dt
5
V/ns
TJ,TSTG
-55to+150
℃
TL
260
℃
10
lbf·in
1.1
N·m
Parameter
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Mounting Torque
6-32 or M3 screw
UNIT
V
A
Parameter
Symbol
10N50TF
Units
Thermal resistance , Channel to Case
Rth(ch-c)
3.13
℃/W
Thermal resistance , Channel to Ambient
Rth(ch-a)
62.5
℃/W
PD
40
W
Maximum Power Dissipation
TC=25℃
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Electrical
Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
Symbol
BVDSS
Test Conditions
VGS=0V,ID=250uA
ΔBVDSS
Reference
/ΔTJ
ID=250uA
to
25℃ ，
Min
Typ
Max
Units
500
－
－
V
－
0.6
－
V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=500V,VGS=0V
－
－
1
uA
Gate-Body Leakage Current,Forward
IGSSF
VGS=30V,VDS=0V
－
－
100
nA
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-30V,VDS=0V
－
－
-100
nA
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
2
－
4
V
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=5A
－
0.5
0.75
Ω
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
－
1620
－
pF
Output Capacitance
Coss
f=1.0MHZ
－
154
－
pF
Reverse Transfer Capacitance
Crss
－
8.4
－
pF
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=250V,ID=10A,
－
26
－
ns
tr
RG=10Ω (Note3,4)
－
20
－
ns
td(off)
－
52
－
ns
Turn-Off Fall Time
tf
－
21
－
ns
Total Gate Charge
Qg
VDS=400V,ID=10A,
－
32
－
nC
Gate-Source Charge
Qgs
VGS=10V, (Note3,4)
－
7.9
－
nC
Gate-Drain Charge
Qgd
－
12
－
nC
IS
－
－
10
A
Pulsed Diode Forward Current
ISM
－
－
40
A
Diode Forward Voltage
VSD
IS=10A,VGS=0V
－
－
1.5
V
Reverse Recovery Time
trr
VGS=0V,IS=10A,
－
411
－
ns
Reverse Recovery Charge
Qrr
dIF/dt=100A/us,
－
2.588
－
uC
Turn-On Rise Time
Turn-Off Delay Time
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward
Current
(Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. L=10mH,IAS=10.8A , starling TJ=25℃.
3. ISD=10A,dI/dt≤100A/us,VDD≤BVDSS,starting TJ=25℃,Pulse width≤300us;duty cycle≤2%.
4. Repetitive rating; pulse width limited by maximum junction temperature.
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TEST CIRCUIT AND WAVEFORM
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RATINGAND CHARACTERISTIC CURVES
10
Vgs=10V
TJ =25℃
24
VGS,Gate-to-Source Voltage(V)
ID,Drain-to-Source Current(A)
32
7V
6V
16
5V
8
4.5V
0
0
5
10
15
20
VDS,Drain-to-Source Voltage(V)
2
0
0
8
24
16
32
Qg ,Total Gate Charge(nC)
40
TJ =25℃
Capacitance(pF)
TJ =150℃
1
VGS =0V
0.2
0.4 0.6 0.8 1.0 1.2
VDS,Source-Drain Voltage(V)
100
10
1
1.4
0.1
700
3
650
2.5
600
550
500
450
400
-60 -40 -20 0 25 50 75 100 125 150 175
Tj,Juntion Temperature(℃)
Ciss
1000
RDS(ON) , Rrain-Source
On-Resistance ,Nomalized
ISD , Reverse Drain Current(A)
4
10000
10
0.1
VDS=400V
6
25
100
Vds, Drain-to-Source
Brakdown Voltage(V)
8
Coss
Crss
100
1
10
VDS,Drain-to-Source Voltage(V)
1000
50
25
75
100 125
Tj,Juntion Temperature(℃)
150
2
1.5
1
0.5
0
0
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10
10
100μs
1
Limited by RDS(on)
1ms
10ms
RDS(ON) , Rrain-Source
On-Resistance (Ω)
ID, Drain Current(A)
Operation in this Area
Limited by RDS(on)
IDM=Limited
100
0.1 TC=25℃
DC
TJ=150℃
BVDSS Limited
Single Pulse
0.01
1
10
100
1000
VDS,Drain-to-Source Voltage(V)
VTH , Gate Threshold Voltage(V)
EAS , Avalanche Energy(mJ)
450
300
150
Nomalized Effective
Transient Thermal Impedance
VGS =10V
1
10
ID, Drain Current(A)
100
5
600
4
3
2
1
0
-80
25
50
75
100
125
150
TCH , Channel Temperature(Initial) (℃)
1
1
0.1
0.1
750
0
Common Source
Tc=25℃
Pulse Test
Common Source
VDS=10V
ID=1mA
Pulse Test
-40
0
40
80 120
TC, Case Temperature(℃)
140
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01
0.1
1
10
Pulse Time(s)
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PACKAGE OUTLINE DIMENSIONS
TO-220TF
B
L
G
I
C
H
A
PIN 1 2
D
3
E
J
F
P
K
TO-220TF
Min
Max
A .590(15.0) .650(16.5)
B .393(10.0) .414(10.5)
C .118(3.00) .138(3.50)
D .118(3.00) .146(3.70)
E .512(13.0) .551(14.0)
F .028(0.70) .035(0.90)
G .114(2.90) .138(3.50)
H .255(6.50) .280(7.10)
I .173(4.40) .197(5.00)
J .102(2.60) .110(2.80)
K .018(0.45) .026(0.65)
L .092(2.35) .109(2.75)
P .890(2.25) .113(2.85)
Dim
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