BT137

BT137

  • 厂商:

    DC(东晨)

  • 封装:

    TO-220-3

  • 描述:

    1个双向可控硅 800V 30MA

  • 数据手册
  • 价格&库存
BT137 数据手册
江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd BT137 双向可控硅 TRIAC 产品概述 版本号 201603-A GENERAL DESCRIPTION BT137 双向可控硅采用穿通隔离台面结构,复合玻璃钝化PN结表面保护工艺技术,dv/dt高,可靠性高, 适用于控温、调光、马达控制。 BT137 Triacs is fabricated using separation diffusion processes ,the junction termination areas are passivated with glass. Thanks to highly dv/dt and reliability,the Triacs series is suitable for domestic lighting ,heating and motor speed controllers. 主要参数 MAIN CHARACTERISTICS 参数 Parameter 数值 Value 单位 Unit IT(RMS) 8 A VDRM/VRRM 600&800 V IGT(III) ≤10 mA FEATURES 产品特性    dv/dt高 通态压降低 Rohs环保产品 Highly dv/dt Low on-state voltage Rohs Products G A1 A2 TO-220D 应用领域 APPLICATIONS 主要应用于调光、控温、马达控制。 domestic lighting ,heating and motor speed controllers. 86-510-87136806 1 /4 http://www.jsdgme.com 江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd 极限值(除非另有规定,Tj=25℃) ABSOLUTE RATINGS (Tj=25℃,unless otherwise specified) 符号 参数 Symbol Parameter IT(RMS) RMS 通态电流 RMS on-state current (full sine wave) ITSM I2t di/dt IGM PG(AV) Tstg Tj 通态峰值浪涌电流 Non repetitive surge peak on-state current I2t 耗散值 I2t value for fusing 通态电流上升值 Critical rate of rise of on-state current 门极峰值电流 Peak gate current 平均门极耗散功率 Average gate power dissipation 贮存结温范围 Storage junction temperature range 工作结温范围 Operating junction temperature range 数值 Value 8 单位 Unit A F=50HZ ,t=20ms 60 A TP=10ms 21 A2s F=120HZ,Tj=125℃ 50 A/µs TP=20µs,Tj=125℃ 2 A 0.5 W -40-+150 ℃ -40-+125 ℃ TC=102℃ Tj=125℃ 电参数(除非另有规定,Tj=25℃) ELECTRICAL CHARACTERISTICS (Tj=25℃,unless otherwise specified) 参数 Parameter 符号 Symbol 触发电流 Gate trigger current IGT 触发电压 Gate trigger voltage 维持电流 Holding current 擎住电流 Latching current 电压上升率 Rise of off- state voltage 通态压降 Peak on-state voltage 断态漏电流 VGT Peak repetitive forward blocking current 规范值 Value D E Ⅰ~Ⅲ ≤5 ≤10 IV ≤10 ≤25 单位 Unit 测试条件 Test Conditions mA VD=12V,IT=0.1A V VD=12V, IT=0.1A ≤1.5 Ⅰ~IV IH ≤20 ≤30 mA VD=12V,IT=0.1A IL ≤30 ≤35 mA VD=12V,IT=0.1A dv/dt ≥20 ≥50 V/μS VD=67%VDRM VTM ≤1.65 V IT=10A IDRM IRRM ≤10 μA VRRM=VDRM,Tj = 25°C ≤0.5 mA VRRM=VDRM,Tj =125°C 热特性 THERMAL RESISTANCES 符号 Symbol 参数 Parameter 数值 Value 单位 Unit Rth(j-c) Junction to case(AC) 1.6 ℃/W Rth(j-a) Junction to ambient 60 ℃/W 86-510-87136806 2 /4 http://www.jsdgme.com 江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd 特征曲线 ELECTRICAL CHARACTERISTICS (CURVES) 图2 RMS通态电流与Tc温度关系 Fig.2. RMS On-state Current Versus TL 图1 最大耗散功率与RMS通态电流关系 Fig.1.Maximum Power Dissipation Versus on-state current 图3 通态特性 Fig.3.On-State Characteristics 图4 通态浪涌峰值电流与周期数关系 Fig.4.Surge Peak On-state Current Versus Number Cycles 图5 IGT、IH、IL相对值(相对于25℃)与结温关系 Fig.5.Relative Variation Of Gate Trigger Current , Holding Current And Latching Current Versus Junction Temperature (Typical Value) 86-510-87136806 3 /4 http://www.jsdgme.com 江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd 封装尺寸 PACKAGE MECHANICAL DATA TO-220D Information furnished is believed to be accurate and reliable. However, Jiangsu Dongchen Electronics Technology CO.,LTD assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Jiangsu Dongchen Electronics Technology CO.,LTD. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. Jiangsu Dongchen Electronics Technology CO.,LTD products are not authorized for use as critical components in life support devices or systems without express written approval of Jiangsu Dongchen Electronics Technology CO.,LTD. 86-510-87136806 4 /4 http://www.jsdgme.com
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