MS8N100FT

MS8N100FE/FK/FS/FT Features  Low gate charge  Low Crss (typ 9pF)  Fast switchin  100% avalanche tested  Improved dv/dt capability  RoHS product Applications  High frequency switching mode power supply  Electronic ballast  UPS Absolute Ratings (Tc=25℃) Parameter Symbol Value Unit Drain-Source Voltage VDSS 1000 V Drain Current-continuous ID T=25℃ T=100℃ 8 A 5 A Drain Current-pulse (note 1) IDM 32* A Gate-Source Voltage VGS ±30 V Single pulse avalanche energy(note 2) EAS 650 mJ Avalanche Current（note 1） IAR 8 A Repetitive Avalanche Energy(note 1) EAR 16.7 mJ Power Dissipation (TO-263\TO-262\TO-220) PD TC=25℃ Derate above 25℃ 167 W 1.43 W/℃ Power Dissipation (TO-220F) PD TC=25℃ Derate above 25℃ 31.7 W 0.25 W/℃ Operating and Storage Temperature Range TJ,TSTG -55~+150 ℃ dv/dt 4.5 V/ns TL 300 ℃ Peak Diode Recovery dv/dt （note 3） Maximum Lead Temperature for Soldering Purposes *Drain current limited by maximum junction temperature H1.05 Maspower 1 MS8N100FE/FK/FS/FT Electrical Characteristics(TCASE=25℃ Parameter Drain-Source Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Symbol Tests conditions BVDSS ID=250μA,VGS=0V Min Type Max Units 1000 - - V ∆BVDSS/∆ ID=250μA,referenced TJ to 25℃ - 1.05 - V/℃ VDS=1000V,VGS=0V， TC=25℃ - - 1 μA VDS=800V,TC =125℃ - - 10 μA Zero Gate Voltage Drain Current IDSS Gate body leakage current IGSS VDS=0V,VGS=±30V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3.0 - 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS=10V,ID=4A - 1.8 2 Ω Forward Transconductance gFS VDS=40V,ID=4A (note 4) - 5.6 - S On-Characteristics Dynamic Characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS=25V, VGS=0V, f=1.0MHZ Electrical Characteristics(TCASE=25℃ Parameter - 1320 1716 pF - 105 136 pF - 9 12 pF unless otherwise specified) Symbol Tests conditions Min Type Max Units Switching-Characteristics Turn-On delay time td(on) Turn-On rise time tr Turn-Off delay time td(Off) Turn-Off rise time tf Total Gate Charge Qg Gate-Source charge Qgs Gate-Drain charge Qgd H1.05 VDD=500V,ID=8A, RGEN=25Ω (note 4,5) VDS=800V,ID=8A, VGS=10V (note 4,5) - 34 75 ns - 85 155 ns - 56 113 ns - 59 118 ns - 14 19 nC - 2.0 - nC - 7.0 - nC Maspower 2 MS8N100FE/FK/FS/FT Drain-Source Diode Characteristics and Maximum Ratings Diode Forward Voltage (note 3) VSD VGS=0V,IS=8A - - 1.4 V Maximum Pulsed Drain-Source Diode Forward Current ISM - - - 24 A Maximum Continuous Drain Source Diode Forward Current IS - - - 8 A Reverse recovery time trr - 625 - ns Reverse recovery charge Qrr VGS=0V, IS=8A dIF/dt=100A/μs (note 4) - 6.71 - μC Thermal Characteristic Value TO-262/TO-263 TO-220F Parameter Symbol Unit Thermal Resistance,junction to Case Rth(j-C) 0.78 3.94 ℃/W Thermal Resistance, Junction to Ambient Rth(j-A) 62.5 80 ℃/W Order Message Marking Package MS8N100FE TO-263 MS8N100FK TO-262 MS8N100FS TO-220F MS8N100FT TO-220 Notes: 1. Pulse width limited by maximum junction temperature 2. L=33.0mH, IAS=8A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3. ISD ≤8A,di/dt ≤200A/µs,VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test：Pulse Width ≤300µs,Duty Cycle≤2％ 5. Essentially independent of operating temperature H1.05 Maspower 3 MS8N100FE/FK/FS/FT ELECTRICAL CHARACTERISTICS (curves) H1.05 Maspower 4 MS8N100FE/FK/FS/FT H1.05 Maspower 5 MS8N100FE/FK/FS/FT PACKAGE MECHANICAL DATA H1.05 Maspower 6 MS8N100FE/FK/FS/FT H1.05 Maspower 7 MS8N100FE/FK/FS/FT H1.05 Maspower 8