WSR70P10D

WSR70P10D P-Ch MOSFET General Description Product Summery The WSR70P10D is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS -100V RDSON ID 19mΩ -70A Applications The WSR70P10D meet the RoHS and Green Product requirement with full function reliability approved. z Inverters TO-220AB Pin Configuration Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Rating Parameter Symbol Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C -70 A TC=25°C -240 A TC=25°C -70 TC=100°C -45 TC=25°C 190 TC=100°C 95 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=-10V) IDP ID PD Maximum Power Dissipation A W RθJC Thermal Resistance-Junction to Case 0.8 °C/W RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W 400 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed www.winsok.tw Page 1 Rev1.0 Mar.2022 WSR70P10D P-Ch MOSFET Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current -100 V VDS=-100V, VGS=0V -1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS=-10V, IDS=-20A µA -30 -1.2 -1.6 -2.5 V ±100 nA 25 mΩ -1.2 V 19 Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time VGS=0V,VDS=0V,F=1MHz Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGS=0V, VDS=-50V, Frequency=1.0MHz ns 560 nC 2 Ω 4230 388 pF 26 26 VDD=-50V,IDS=-5A, VGEN=-10V,RG=6Ω 78 ns 200 210 Turn-off Fall Time Gate Charge Characteristics ⑤ 80 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 208 ⑤ RG Qg ISD=-5A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics tf ISD=-30A, VGS=0V VDS=-50V, VGS=-10V, IDS=-5A 15.6 nC 17.2 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =-40A, VDD =-60V, RG = 50Ω, Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev1.0 Mar.2022 WSR70P10D P-Ch MOSFET Typical Characteristics Output Characteristics Drain-Source On Resistance 100 -10V RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) 100 -6V -8V 80 60 -5V 40 20 -3V 0 0 1 2 3 4 80 60 40 -10V 20 0 5 0 30 -VDS - Drain-Source Voltage (V) 120 Source-Drain Diode Forward 100 VGS=-10V ID=-60A 2.0 -IS - Source Current (A) Normalized On Resistance 90 -ID - Drain Current (A) Drain-Source On Resistance 2.5 60 1.5 1.0 0.5 TJ=25°C Rds(on)=19mΩ TJ=175°C 10 TJ=25°C 1 0.1 0.0 0.3 -50 -25 0 25 50 75 100 125 150 0.6 1.5 1.8 Gate Charge -VGS - Gate-Source Voltage (V) Capacitance 6000 C - Capacitance (pF) 1.2 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) Frequency=1.0MHz 4500 Ciss 3000 Coss 1500 0.9 Crss 0 10 VDS=-80V IDS=-60A 9 8 7 6 5 4 3 2 1 0 1 10 100 0 -VDS - Drain-Source Voltage (V) www.winsok.tw 20 40 70 100 QG - Gate Charge (nC) Page 3 Rev1.0 Mar.2022 WSR70P10D P-Ch MOSFET Typical Characteristics Power Dissipation 200 -ID - Drain Current (A) 180 160 PD - Power (W) Drain Current 70 140 120 100 80 60 40 20 60 50 40 30 20 10 VGS=-10V 0 0 0 25 50 75 100 125 150 25 175 50 75 10µs 100µs 1ms 10ms DC 1 0.1 0.01 TC=25°C 0.01 0.1 150 175 Drain Current RDS(ON) - On - Resistance (mΩ) RDS(ON) limited -ID - Drain Current (A) Safe Operation Area 10 125 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 100 100 150 Ids=-20A 125 100 75 50 25 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 0.01 Single Pulse RθJC=0.8°C/W 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) www.winsok.tw Page 4 Rev1.0 Mar.2022 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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