WSR30N65C

WSR30N65C N-Ch MOSFET General Description Product Summery The WSR30N65C series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s ACDC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. BVDSS RDSON ID 650V 110mΩ 28A Applications The WSR30N65C meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Features z Load Switch z Advanced high cell density Trench technology TO-220F Pin Configuration Buck Converter z Networking DC-DC Power System z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS ±30 V 1 28 A 1 18 A 112 A 676 mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Single Pulse Avalanche Energy 3 PD Total Power Dissipation 260 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 62.5 ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.48 ℃/W www.winsok.tw Page 1 Rev1.1 May.2022 WSR30N65C N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS(th) Typ. Max. Unit 650 --- --- V --- 0.098 --- V/℃ 110 140 mΩ 2.0 3.0 4.0 V --- -4.57 --- mV/℃ VDS=650V , VGS=0V , TJ=25℃ --- --- 1 VDS=650V , VGS=0V , TJ=125℃ --- --- 100 VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. Reference to 25℃ , ID=1mA 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS=10V , ID=14A VGS=VDS , ID =250uA --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±200V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=9A --- 32 --- S Qg Total Gate Charge (10V) --- 38 --- Qgs Gate-Source Charge --- 13 --- Qgd Td(on) VDS=100V , VGS=10V , ID=18A Gate-Drain Charge --- 11.5 --- Turn-On Delay Time --- 14 --- uA nC Rise Time VDD=30V , VGS=10V , --- 12 --- Turn-Off Delay Time RG=6Ω, ID=18A, RL=30Ω --- 65 --- Fall Time --- 11 --- Ciss Input Capacitance --- 2070 --- Coss Output Capacitance --- 120 --- Crss Reverse Transfer Capacitance --- 0.5 --- Min. Typ. Max. Unit --- --- 28 A --- --- 112 A --- --- 1.2 V --- 190 --- nS --- 2000 --- nC Tr Td(off) Tf VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=28A , TJ=25℃ IF=14A , dI/dt=100A/µs , TJ=25℃ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω www.winsok.tw Page 2 Rev1.1 May.2022 WSR30N65C N-Ch MOSFET Typical Characteristics Figure1. Safe operating area Figure2. Transient Thermal Impedance Figure3. Source-Drain Diode Forward Voltage Figure4. Output characteristics Figure5. Transfer characteristics www.winsok.tw Figure6. Static drain-source on resistance Page 3 Rev1.1 May.2022 WSR30N65C N-Ch MOSFET Figure7. RDS(ON) vs Junction Temperature Figure8. BVDSS vs Junction Temperature Figure9. Maximum ID vs Junction Temperature Figure10. Gate charge waveforms Figure11. Capacitance www.winsok.tw Page 4 Rev1.1 May.2022 WSR30N65C N-Ch MOSFET TO-220 Package Information TO-220 S Y M B O L A MIN. MAX. MIN. MAX. 4.20 4.80 0.165 0.189 A1 2.34 3.20 0.092 0.126 A2 2.10 2.90 0.083 0.114 b 0.50 0.90 0.020 0.035 0.075 MILLIMETERS RECOMMENDED LAND PATTERN INCHES b2 0.91 1.90 0.035 c 0.30 0.80 0.012 0.031 D 8.10 9.40 0.319 0.370 d1 14.50 16.50 0.571 0.650 d2 12.10 12.90 0.476 0.508 E 9.70 10.70 0.382 0.421 14.50 0.512 0.570 e 2.54 BSC R0. 45 UNIT: mm 0.100 BSC L 13.00 L1 1.60 4.00 0.063 0.157 P 3.00 3.60 0.118 0.142 www.winsok.tw 2.54 Page 6 Rev1.1 May.2022 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.