MP150N08

80V N-Channel Power MOSFET DESCRIPTION The MP150N08 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used ina wide variety of applications. KEY CHARACTERISTICS Schematic diagram ① VDS = 80V,ID = 150A RDS(ON) < 5.0mΩ @ VGS=10V ②High density cell design for lower Rdson ③Fully characterized avalanche voltage and current ④Good stability and uniformity with high EAS ⑤Excellent package for good heat dissipation Application ①Power switching application ②Hard switched and High frequency circuits ③Uninterruptible power supply TO-220 Package Marking And Ordering Information Ordering Codes Package Product Code MP150N08-P TO-220 MP150N08P Absolute Maximum Ratings (TA=25℃ Packing Tube unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous Drain Current-Pulsed (Note 1) ID 150 A IDM 823 A Maximum Power Dissipation(Tc=25℃) PD 259 W Single pulse avalanche energy(Note 2) EAS 823 mJ TJ,TSTG -55 To 175 ℃ Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Case RθJC www.mns-kx.com 0.7 ℃/W Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 80 - - V Zero Gate Voltage Drain Current IDSS VDS=80V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-Source On-State Resistance(Note 3) RDS(ON) VGS=10V, ID=80A - 4 5 mΩ gFS VDS=50V,ID=75A - 180 - S - 4115 - pF - 570 - pF - 395 - pF - 28 - nS On Characteristics Forward Transconductance Dynamic Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=30V,VGS=0V, f=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time td(on) tr VDD=40V, ID=40A, - 20 - nS td(off) VGS=10V,RGEN=3Ω - 50 - nS 23 - nS - 69 - nC - 23 - nC - 22 - nC - - 1.2 V Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=40V,ID=40A VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V,IS=155A Notes: 1.Repetitive Rating:Pulse width limited by maximum junction temperature. 2.EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 3.Pulse Test:Pulse Width≤300μs,Duty Cycle≤2%. 4.Guaranteed by design,not subject to production. www.mns-kx.com Characteristics Curves Figure 1 VDS,Drain-Source Voltage (V) Figure 2 Tj-Junction Temperature (° C) Figure 3 GS,Gate-Source Voltage(v) Figure 5 OVSD,Source-Drain Voltage www.mns-kx.com Figure 4 Tj-Junction Temperature (° C) Figure 6 VDS,Drain-Source Voltage (V) Figure 7 VDS,Drain-Source Voltage (V) Figure 8 Qg-Total Gate Charge (nC) Figure 9.Normalized Maximum Transient ThermalImpedance www.mns-kx.com Test Circuit and Waveform Figure 10.Unclamped Inductive Test Circuit andwaveforms Figure 11.Switching Time Test Circuit and waveforms www.mns-kx.com Package Description Items Values(mm) MIN MAX A 9.60 10.6 B 15.0 16.0 B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 2.70 3.80 L 12.6 14.8 N 2.34 2.74 Q 2.40 3.00 φP 3.50 3.90 TO-220 Package www.mns-kx.com NOTE: 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. Please do not exceed the absolute maximum ratings of the device when circuit designing. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink. 3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to change withoutprior notice. CONTACT: 深圳市迈诺斯科技有限公司（总部） 地址：深圳市福田区华富街道田面社区深南中路4026号田面城市大厦22B-22C 邮编：518025 电话：0755-83273777 www.mns-kx.com