MP18N20

MP18N20 1 Description MP18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V DS 200 V ID 18 A R DS(ON).Typ 0.13 Ω FEATURES Fast Switching Low Crss 100% avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High frequency switching mode power supply ORDERING INFORMATION Ordering Codes Package MP18N20 TO-220 MPF18N20 TO-220F MDP18N20 TO-251 MDT18N20 TO-252 Product Code 18N20 Packing Tube Tube Tube Tape Reel MP18N20 XXXX：Product Code (2) Package type (1) Chip name (1)MP18N20:200V 18A (2) TO-220F TO-220 TO-251 TO-252 SHENZHEN MINOS TECHNOLOGY CO.,LTD XXXX YYWW ZZ SSSSS YYWW ： Year&Week ZZ ： Assembly Code SSSSS ： Lot Code www.mns-kx.com MP18N20 2 ABSOLUTE RATINGS at TC = 25°C, unless otherwise specified Symbol Parameter V DSS Drain-to-Source Voltage ID I DM V GS E AS dv/dt PD PD Rating Units 200 18 11 72 ±30 580 5.0 V A A A V mJ V/ns 130 W Derating Factor above 25°C 1.2 W/℃ Power Dissipation TO-220F 42 W 0.33 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current Continuous Drain Current T C = 100 °C Pulsed Drain Current(Note1) Gate-to-Source Voltage Single Pulse Avalanche Energy(Note2) Peak Diode Recovery dv/dt(Note3) Power Dissipation TO-220, TO-251,TO-252 Derating Factor above 25°C 3 T J ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering Thermal characteristics Thermal characteristics (No FullPAK) TO-220\TO-251\TO-252 Symbol Parameter RATINGS Units R θJC Junction-to-Case 0.84 ℃/W R θJA Junction-to-Ambient 62.5 ℃/W RATINGS Units 3.0 ℃/W 62.5 ℃/W Thermal characteristics (FullPAK) TO-220F Symbol Parameter R θJC Junction-to-Case R θJA Junction-to-Ambient SHENZHEN MINOS TECHNOLOGY CO.,LTD www.mns-kx.com MP18N20 4 Electrical Characteristics at TC = 25°C, unless otherwise specified OFF Characteristics Values Symbol Parameter Test Conditions Mi n. T yp. Max. V DSS Drain to Source Breakdown Voltage V GS =0V, I D =250µA 200 -- -- ΔBV DSS /Δ TJ Bvdss Temperature Coefficient ID=250uA, Reference25℃ -- 0.25 -- V/℃ -- -- 1 µA Drain to Source Leakage Current V DS =200V, V GS = 0V, Tj = 25℃ V DS =160V, V GS = 0V, Tj = 125℃ -- -- 100 µA V GS =+30V -- -- 100 nA V GS =-30V -- -- -100 nA I DSS I GSS(F) I GSS(R) Gate to Source Forward Leakage Gate to Source Reverse Leakage Units V ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source OnResistance VGS=10V, ID=7.5A(Note4) V GS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA(Note4) g fs Forward Transconductance VDS=15V, ID =9A(Note4) Values Min. -- Typ. Max. 0.13 0.18 Units Ω 2.0 -- 4.0 V -- 12 -- S Dynamic Characteristics Symbol Parameter Test Conditions Rg C iss C oss Gate resistance f = 1.0MHz C rss Reverse Transfer Capacitance Input Capacitance Output Capacitance SHENZHEN MINOS TECHNOLOGY CO.,LTD VGS = 0V VDS = 25V f = 1.0MHz Values Min. Typ. Max. ---- 2 1320 450 ---- -- 130 -- Units Ω PF www.mns-kx.com MP18N20 Switching Characteristics Symbol Parameter t d(ON) Tr t d(OFF) tf Qg Q gs Q gd Turn-on Delay Time Rise Time Turn-Off Delay Time Test Conditions ID =18A VDD = 100V VGS = 10V RG =20Ω Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“Miller”)Charge ID =18A VDD =160V VGS = 10V Values Mi n. T yp. Max. -------- 15 52 46 37 23 8 6 -------- Units ns nC Source-Drain Diode Characteristics Symbol Parameter Test Conditions IS TC=25 °C I SM Continuous Source Current (Body Diode) Maximum Pulsed Current (Body Diode) V SD Diode Forward Voltage T rr Reverse Recovery Time Q rr Reverse Recovery Charge IS=18A, VGS=0V(Note4) IS=18A, Tj = 25°C dIF/dt=100A/us, VGS=0V Values Units Mi n. T yp. Max. -- -- 18 A -- -- 72 A -- -- 1.2 V -- 350 -- ns -- 3600 -- nC Note1: Pulse width limited by maximum junction temperature Note2: L=2.7mH, VDs=50V, Start TJ=25℃ Note3: ISD =18A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ Note4: Pulse width tp≤300µs, δ≤2% SHENZHEN MINOS TECHNOLOGY CO.,LTD www.mns-kx.com MP18N20 5. Characteristics Curves Figure 1a Safe Operating Area (No FullPAK) Figure 1b Safe Operating Area (FullPAK) Figure 2a Power Dissipation (No FullPAK) Figure 2b Power Dissipation (FullPAK) SHENZHEN MINOS TECHNOLOGY CO.,LTD www.mns-kx.com MP18N20 Figure 3a Max Thermal Impendance (No FullPAK) Figure 4 Typical Output Characteristics SHENZHEN MINOS TECHNOLOGY CO.,LTD Figure 3b Max Thermal Impendance (FullPAK) Figure 5 Typical Transfer Characteristics www.mns-kx.com MP18N20 Figure 6 Typical Drain to Source ON Resistance vs Drain Current Figure 7 Typical Drian to Source on Resistance vs Junction Temperature Figure 8 Typical Theshold Voltage vs Junction Temperature Figure 9 Typical Breakdown Voltage vs Junction Temperature SHENZHEN MINOS TECHNOLOGY CO.,LTD www.mns-kx.com MP18N20 Figure 10 Capacitance Characteristics SHENZHEN MINOS TECHNOLOGY CO.,LTD Figure 11 Gate Charge Characteristics www.mns-kx.com MP18N20 6. Test Circuit and Waveform Figure 12 Gate Charge Test Circuit Figure 13 Gate Charge Waveforms Figure 14 Resistive Switching Test Circuit Figure 15 Resistive Switching Waveforms SHENZHEN MINOS TECHNOLOGY CO.,LTD www.mns-kx.com MP18N20 Figure 16 Diode Reverse Recovery Test Circuit Figure 17 Diode Reverse Recovery Waveform Figure 18 Unclamped Inductive Switching Test Circuit Figure 19 Unclamped Inductive Switching Waveform SHENZHEN MINOS TECHNOLOGY CO.,LTD www.mns-kx.com MP18N20 7. Package Description C A D G C1 E F N Items N Values(mm) MIN MAX A 9.60 10.4 B B1 C C1 15.4 8.90 4.30 2.10 2.40 16.2 9.50 4.90 3.00 3.00 L 0.60 0.30 1.12 3.40 1.60 12.0 1.00 0.60 1.42 3.80 2.90 14.0 N Q 2.34 3.15 2.74 3.55 2.90 3.30 D E F G H TO-220F Package SHENZHEN MINOS TECHNOLOGY CO.,LTD www.mns-kx.com MP18N20 Values(mm) Items MIN MAX A 9.60 10.6 B B1 C C1 D E F G H L N Q 15.0 8.90 4.30 2.30 1.20 0.70 0.30 1.17 2.70 12.6 2.34 2.40 3.50 16.0 9.50 4.80 3.10 1.40 0.90 0.60 1.37 3.80 14.8 2.74 3.00 3.90 TO-220 SHENZHEN MINOS TECHNOLOGY CO.,LTD Package www.mns-kx.com MP18N20 Items A B B1 B2 C D E F G H L* M N MIN 6.30 5.70 1.00 6.80 2.10 0.30 0.50 0.30 0.70 1.60 3.9 5.10 2.09 Values(mm) MAX 6.90 6.30 1.20 7.40 2.50 0.60 0.70 0.60 1.00 2.40 4.3 5.50 2.49 adjustable *： TO-251 Package SHENZHEN MINOS TECHNOLOGY CO.,LTD www.mns-kx.com MP18N20 Items A A1 B C D E1 E2 F G L1 L2 H M N R T Y MIN 6.30 0 5.70 2.10 0.30 0.60 0.70 0.30 0.70 9.60 2.70 0.60 5.10 2.09 1.40 5.10 Values(mm) 0 .3 MAX 6.90 0.13 6.30 2.50 0.60 0.90 1.00 0.60 1.20 10.50 3.10 1.00 5.50 2.49 1.60 6.30 TO-252 Package SHENZHEN MINOS TECHNOLOGY CO.,LTD www.mns-kx.com