MP70N10

厂商：
MINOS
封装：
TO-220-3
描述：
类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):70A;功率(Pd):200W;导通电阻(RDS(on)@Vgs,Id):17mΩ@10V,28A;阈值电压(Vgs(th)@Id)...

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MP70N10 数据手册

100V N-Channel MOSFET Description MP70N10, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. FEATURES 1 2 3 4 Schematic diagram VDS=100V,ID=70A RDS(ON)

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