MP13N50

MP13N50 Silicon N-Channel Power MOSFET Description The MP13N50PF uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features l VDS=500V,ID=13A l Low ON Resistance l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Application l Power switching application l Adapter and charger Electrical Characteristics @ Ta=25℃ (unless otherwise specified) a) Absolute Maximum Ratings: Symbol VDSS ID IDM VGS Ptot Tj EAS Parameter Drain-to-Source Breakdown Voltage Drain Current (continuous) at Tc=25℃ Drain Current (pulsed) Gate to Source Voltage Total Dissipation at Tc=25℃ Max. Operating Junction Temperature Single Pulse Avalanche Energy 版本号：A01 Value 500 13 52 +/-30 60 175 1000 Units V A A V W ℃ mJ 1/3 MP13N50 b) Electrical Parameters: Symbol VDS RDS(on) VGS(th) IDSS IGSS(F) IGSS(R) Ciss Coss Crss Parameter Drain-source Voltage Static Drain-to-Source on-Resistance Gated Threshold Voltage Drain to Source leakage Current Gated Body Foward Leakage Gated Body Reverse Leakage Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min VGS =0V, ID=250µA 500 VGS =10V, ID=6.5A Typ Max Unit V 0.34 0.50 Ω 3.1 4.0 V VDS=500V, VGS = 0V 1.0 µA VGS = +30V 100 nA VGS = -30V -100 nA VDS=VGS, ID=250µA 2.0 VGS =0V, VDS=25V, f=1.0MHZ 2315 190 pF pF 11 pF c) Switching Characteristics Symbol td(on) tr Parameter Turn-on Delay Time Test Conditions Turn-on Rise Time td(off) VDD=250V,ID=13A, RG=10Ω Turn-off Delay Time tf Turn-off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Min VDS=400V ID=13A VGS=10V Typ Max Unit 28 nS 21 nS 62 nS 32 nS 40 nC 9.2 nC 14 nC d) Source-Drain Diode Characteristics Symbol ISD Parameter S-D Current(Body Diode) Test Conditions Min Typ Max 13 Unit 52 A V A ISDM Pulsed S-D Current(Body Diode) VSD Diode Forward Voltage VGS =0V, IDS=13A 1.5 trr Reverse Recovery Time 555 nS Qrr Reverse Recovery Charge TJ=25℃,IF=13A di/dt=100A/us 4550 µC *Pulse Test: Pulse Width