ASDM40N100P-T

ASDM40N100P 40V N-Channel MOSFET Features Product Summary Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices • V DS R DS(on),TYP @ VGS=10 V ID Available (RoHS Compliant) 40 V 4.0 mΩ 100 A Application DC/DC Converters • On board power for server • Synchronous rectification • Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 100 A TC=25°C 400 A TC=25°C 100 TC=100°C 51 TA=25°C 25 TA=70°C 19 TC=25°C 65 TC=100°C 26 TA=25°C 4.2 TA=70°C 2.7 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ② ID Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA Parameter Symbol RJC ③ RJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W Rating Unit 1.44 °C/W 62 °C/W 121 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM40N100P 40V N-Channel MOSFET Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition LIMIT Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) V VDS=40V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 40 30 1 µA 2.5 V ±100 nA VGS=4.5V, IDS=35A 4.6 6.0 mΩ VGS=10V, IDS=50A 4.0 4.5 mΩ 1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=50A, VGS=0V ISD=50A, dlSD/dt=100A/µs 18 ns 29 nC 1.3 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss VGS=0V, VDS=20V, Frequency=1.0MHz Reverse Transfer Capacitance 162 td(ON) Turn-on Delay Time 13 tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time VDD=20V,IDS=50A, VGEN=10V,RG=4.7Ω Turn-off Fall Time 3424 540 21 29 pF ns 9 ⑥ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge NOV 2018 Version1.0 VDS=32V, VGS=10V, IDS=50A 29 5 nC 9 2/7 Ascend Semicondutor Co.,Ltd ASDM40N100P 40V N-Channel MOSFET Typical Characteristics Power Dissipation 70 80 ID - Drain Current (A) 60 PD - Power (W) Drain Current 90 50 40 30 20 10 70 60 50 40 30 20 10 0 VGS=10V 0 0 25 50 75 100 125 25 150 50 TJ - Junction Temperature (°C) 10 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 100 10µs 100µs 1ms 10ms DC 1 TC=25°C 0.1 0.01 0.1 1 10 100 100 125 150 TJ - Junction Temperature (°C) Safe Operation Area 1000 75 Drain Current 10 Ids=50A 8 6 4 2 0 0 1000 1 2 3 7 8 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=1.92°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) NOV 2018 Version1.0 3/7 Ascend Semicondutor Co.,Ltd 10 ASDM40N100P 40V N-Channel MOSFET Typical Characteristics Output Characteristics VGS=10V，8V，7V 80 5V 60 3V 40 20 2V 0 0 1 2 3 4 Drain-Source On Resistance 10 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 100 5 8 4.5V 6 4 10V 2 0 0 20 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=3.5mΩ -25 0 25 50 75 100 125 TJ=150°C 0.1 0.2 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 2400 1600 Coss 800 Crss 1 1.2 1.4 10 VDS=24V IDS=50A 9 8 7 6 5 4 3 2 1 0 10 100 0 10 20 30 QG - Gate Charge (nC) VDS - Drain-Source Voltage (V) NOV 2018 Version1.0 0.8 Gate Charge Ciss 1 0.6 VSD - Source-Drain Voltage (V) 4000 0 TJ=25°C 1 TJ - Junction Temperature (°C) 3200 100 10 0.0 -50 80 Source-Drain Diode Forward 100 VGS=10V IDS=50A 0.5 60 ID - Drain Current (A) IS - Source Current (A) Normalized On Resistance 2.5 40 4/7 Ascend Semicondutor Co.,Ltd ASDM40N100P 40V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing ASDM40N100P-T 40N100 TO-220 Tube 50/Tube MARKING PACKAGE TO-220 NOV 2018 Version1.0 Quantity 40N100 5/7 Ascend Semicondutor Co.,Ltd ASDM40N100P 40V N-Channel MOSFET TO-220 NOV 2018 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM40N100P 40V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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