HSP100N15

HSP100N15 N-Ch 150V Fast Switching MOSFETs General Description ⚫ ⚫ ⚫ ⚫ Product Summary 100% EAS Guaranteed Green Device Available Super Low RDS(ON) Advanced high cell density Trench technology 150 V RDS(ON),typ 7.3 mΩ ID 100 A TO220 Pin Configuration Applications ⚫ ⚫ ⚫ VDS MOTOR Driver. BMS. High frequency switching and synchronous rectification. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 100 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 63 A IDM Pulsed Drain Current2 400 A EAS Single Pulse Avalanche Energy3 785 mJ IAS Avalanche Current 56 A 178 W PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 60 ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.7 ℃/W www.hs-semi.cn Ver 2.0 Typ. 1 HSP100N15 N-Ch 150V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Min. Typ. Max. Unit VGS=0V , ID=250uA 150 --- --- V VGS=10V , ID=20A --- 7.3 9 m VGS=VDS , ID =250uA 2.0 3.0 4.0 V VDS=120V , VGS=0V , TJ=25℃ --- --- 1 VDS=120V , VGS=0V , TJ=125℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.9 ---  --- 100 --- --- 25 --- Drain-Source Breakdown Voltage On-Resistance2 RDS(ON) Static Drain-Source VGS(th) Gate Threshold Voltage IDSS IGSS Rg Drain-Source Leakage Current Conditions Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 31 --- Td(on) Turn-On Delay Time --- 32 --- Tr Rise Time VDD=30V , VGS=10V , RG=3.3, --- 25 --- Td(off) Turn-Off Delay Time ID=1A --- 98 --- VDS=75V , VGS=10V , ID=20A uA nC ns Tf Fall Time --- 89 --- Ciss Input Capacitance --- 5880 --- Coss Output Capacitance --- 401 --- Crss Reverse Transfer Capacitance --- 9.5 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 100 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V VDS=75V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current1,5 Diode Forward Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=50V,VGS=10V,L=0.5mH,IAS=56A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.Package limitation current. www.hs-semi.cn Ver 2.0 2 HSP100N15 N-Ch 150V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VTH vs TJ Fig.6 Normalized RDSON vs TJ www.hs-semi.cn Ver 2.0 3 HSP100N15 N-Ch 150V Fast Switching MOSFETs Fig.8 Safe Operating Area Fig.7 Capacitance Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Switching Waveform Ver 2.0 4 HSP100N15 N-Ch 150V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5