VBFB1405

VBFB1405 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0050 at VGS = 10 V 85 0.0065 at VGS = 4.5 V 70 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS 120 nC COMPLIANT APPLICATIONS • Synchronous Rectification • Power Supplies TO-251 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 25 Parameter TC = 70 °C TA = 25 °C c 70 ID 59 b Pulsed Drain Current IDM Avalanche Current Pulse IAS 80 EAS 320 Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C 250 110 IS TC = 70 °C TA = 25 °C A 312a 200 PD W 3.13b 2.0b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range V a, c 2.6b TC = 25 °C Maximum Power Dissipation A 53b TA = 70 °C Single Pulse Avalanche Energy V 85 a, c TC = 25 °C Continuous Drain Current (TJ = 175 °C) Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit 32 0.33 40 0.4 °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. 服务热线：400-655-8788 1 VBFB1405 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 41 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V -8 1.2 120 µA A VGS = 10 V, ID = 30 A 0.0050 VGS = 4.5 V, ID = 20 A 0.0065 VDS = 15 V, ID = 30 A 180 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 250 Total Gate Charge Qg 120 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2380 VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A tr 180 40 nC 22 f = 1 MHz td(on) td(off) pF 550 VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 0.85 1.3 20 30 11 17 77 115 tf 10 15 td(on) 102 155 tr td(off) VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω tf 62 95 180 270 60 90 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 110 200 IS = 20 A IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 50 75 ns 70 105 nC 30 20 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 VBFB1405 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 5 VGS = 10 thru 5 V 4 I D - Drain Current (A) I D - Drain Current (A) 200 150 VGS = 4 V 100 VGS = 3 V 3 TC = 125 °C 2 TC = 25 °C 50 1 TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.010 400 TC = - 55 °C R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 320 240 TC = 25 °C 160 TC = 125 °C 80 0.008 0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002 0.0000 0 0 15 30 45 60 75 0 90 20 ID - Drain Current (A) 60 40 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 3000 10 ID = 20 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) Ciss 2000 1000 Coss Crss 0 8 VDS = 20 V 6 VDS = 10 V VDS = 30 V 4 2 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) Capacitance 40 0 50 100 150 200 250 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 VBFB1405 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 ID = 30 A 10 I S - Source Current (A) VGS = 10 V (Normalized) R DS(on) - On-Resistance 1.7 1.4 VGS = 4.5 V 1.1 TJ = 150 °C 0.1 0.8 0.01 0.5 - 50 0 - 25 25 50 75 100 125 0.001 0.0 150 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Forward Diode Voltage vs. Temperature 1.2 0.6 0.010 0.008 0.2 VGS(th) Variance (V) R DS(on) - On-Resistance (Ω) TJ = 25 °C 1 0.006 0.004 TJ = 150 °C - 0.2 ID = 5 mA - 0.6 0.002 ID = 250 µA TJ = 25 °C - 1.0 - 50 0.000 0 2 4 6 8 10 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 1000 Limited by RDS(on)* 10 µs 100 µs I D - Drain Current (A) 100 1 ms 10 ms 100 ms, DC 10 1 0.1 TC = 25 °C Single Pulse BVDSS 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 VBFB1405 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 350 400 350 280 Power (W) I D - Drain Current (A) 300 210 140 Package Limited 250 200 150 100 70 50 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TJ - Junction to Case (°C) TJ - Junction to Case (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10 -3 10-2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 VBFB1405 www.VBsemi.com TOĆ251AA (DPAK) E A L2 b2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 e c A1 INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 3.89 9.53 0.153 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 Note: Dimension L3 is for reference only. 服务热线：400-655-8788 6 VBFB1405 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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