VBFB1208N

VBFB1208N www.VBsemi.com N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.056 at VGS = 10 V 25 0.070 at VGS = 6 V 23 TO-251 • • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D G Drain Connected to Drain-Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C V 25 ID 17 IDM 60 IS 19 IAS 25 EAS 18 145 PD A mJ b W 3.5a TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Symbol t  10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. 服务热线：400-655-8788 1 VBFB1208N www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS 4 ± 100 VDS = 200 V, VGS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ = 125 °C 50 VDS = 200 V, VGS = 0 V, TJ = 175 °C 250 ID(on) VDS =5 V, VGS = 10 V RDS(on) gfs 40 V nA µA A VGS = 10 V, ID = 5 A 0.056 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.130 VGS = 10 V, ID = 5 A, TJ = 175 °C 0.260 VGS = 6 V, ID = 5 A 0.070 VDS = 15 V, ID = 19 A 35  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Timec td(on) Turn-Off Delay Timec td(off) Turn-On Delay Rise Timec 2400 VGS = 0 V, VDS = 25 V, F = 1 MHz pF 40 VDS = 100 V, VGS = 10 V, ID = 19 A tr Fall Timec 280 180 10 nC 15 0.5 VDD = 100 V, RL = 5.2  ID  19 A, VGEN = 10 V, Rg = 2.5  tf 2.9 15 25 50 75 30 45 60 90  ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) ISM Pulsed Current Diode Forward Voltage b Source-Drain Reverse Recovery Time 50 A VSD IF = 19 A, VGS = 0 V 0.9 1.5 V trr IF = 19 A, dI/dt = 100 A/µs 180 250 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. 服务热线：400-655-8788 2 VBFB1208N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 7 V 6V 30 I D - Drain Current (A) I D - Drain Current (A) 30 20 5V 10 20 TC = 125 °C 10 25 °C - 55 °C 4V 0 0 0 2 4 6 8 0 10 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 70 6 0.20 R DS(on) - On-Resistance () TC = - 55 °C 60 g fs - Transconductance (S) 1 50 25 °C 40 125 °C 30 20 0.15 VGS = 6 V 0.10 VGS = 10 V 0.05 10 0.00 0 0 10 20 30 0 40 20 30 40 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 2500 VGS - Gate-to-Source Voltage (V) 20 2000 C - Capacitance (pF) 10 Ciss 1500 1000 500 Crss VDS = 100 V ID = 19 A 16 12 8 4 Coss 0 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Capacitance 200 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 VBFB1208N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 100 VGS = 10 V ID = 5 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 2.5 2.0 1.5 1.0 TJ = 150 °C 10 TJ = 25 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature ( °C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 100 25 100 µs ID - Drain Current (A) I D - Drain Current (A) 10 µs Limited by R DS(on)* 20 15 10 10 1 ms 10 ms 1 100 ms 1 s, DC TC = 25 °C Single Pulse 5 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Maximum Avalanche Drain Current vs. Case Temperature 100 1 10 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 4 VBFB1208N www.VBsemi.com TOĆ251AA E A L2 b2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 e INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 3.89 9.53 0.153 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 c A1 Note: Dimension L3 is for reference only. 服务热线：400-655-8788 5 VBFB1208N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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