VBF2355

VBF2355 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.056at V GS = - 10 V - 20 0.072 at V GS = - 4.5 V - 15 • • • • Qg (Typ.) 19 nC Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Load Switch • Notebook Adaptor Switch TO-251 S G Drain Connected to Drain-Tab G D D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 7.9a, b - 20 20 20 15 2.7a, b 1.7a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range V - 20 - 15 -7.9 a, b - 5.6a, b - 60 - 20 IDM Pulsed Drain Current Unit A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 46 25 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. 服务热线：400-655-8788 1 VBF2355 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V - 34 mV/ °C VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 6 A tr - 20 0.072 VDS = - 10 V, ID = - 6 A 28 Ω S 1150 VDS = - 15 V, VGS = 0 V, f = 1 MHz 205 pF 140 VDS = - 15 V, VGS = - 10 V, ID = - 6 A VDS = - 15 V, VGS = - 4.5 V, ID = - 6 A 27 43 19 25 6 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 0.5 2.2 4.4 13 25 12 24 70 tf 9 18 td(on) 48 80 92 160 tr nC 12 f = 1 MHz 40 td(off) µA A 0.056 VGS = - 4.5 V, ID = - 4 A td(on) td(off) 5.3 - 1.4 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 6 A, VGEN = - 4.5 V, Rg = 1 Ω tf 34 60 19 35 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 4.1 - 60 IS = - 3 A, VGS = 0 V IF = - 6 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.75 - 1.2 V 27 45 ns 16 27 nC 12 15 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 VBF2355 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 10 8 VGS = 10 thru 4 V I D - Drain Current (A) I D - Drain Current (A) 48 36 24 12 6 TC = 125 °C 4 TC = 25 °C 2 TC = - 55 °C VGS = 3 V VGS = 1 V, 2 V 0 0.0 0.5 1.5 1.0 2.0 0 2.5 0 2 VDS - Drain-to-Source Voltage (V) 1.0 20 25 Transfer Characteristics 0.10 1500 0.09 1200 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 8 6 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.08 VGS = 4.5 V 0.07 0.06 900 600 Coss 300 VGS = 10 V Crss 0.05 0 0 10 30 20 40 50 60 0 5 10 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.6 VDS = 10 V ID = 6 A 8 1.4 VDS = 15 V 6 4 VDS = 20 V 2 0 0 12 24 36 Qg - Total Gate Charge (nC) Gate Charge VGS = - 4.5 V ID =- 6 A R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 4 48 60 VGS = - 10 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 VBF2355 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 100 ID = 6 A TJ = 150 °C 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 170 ID = 250 µA 136 0.4 Power (W) V GS(th) Variance (V) 0.6 ID = 5 mA 0.2 102 68 0.0 34 - 0.2 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 VBF2355 www.VBsemi.com MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 17.0 ID - Drain Current (A) 13.6 10.2 6.8 3.4 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 6.0 2.0 4.8 1.6 Power (W) Power (W) Current Derating* 3.6 2.4 1.2 0.8 0.4 1.2 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 VBF2355 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM -- TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 4. Surface Mounted 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 VBF2355 www.VBsemi.com TOĆ251AA E A L2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 b2 e INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 3.89 9.53 0.153 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 c A1 Note: Dimension L3 is for reference only. 服务热线：400-655-8788 7 VBF2355 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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