SE6003C

SE6003C N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device For a single MOSFET    VDS = 60V RDS(ON) = 85mΩ @ VGS=10V RDS(ON) = 105mΩ @ VGS=4.5V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous ID Pulsed @TA=25℃ Operating Junction Temperature Range 3 A 10 PD 1.7 W TJ -55 to 150 ℃ Thermal Resistance Symbol RθJA Parameter Junction to Ambient (t≦10s) ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 73.5 ℃/W 1. SE6003C Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 60V, VGS=0V IGSS Gate-Body Leakage Current VGS=20 V Gate Threshold Voltage VDS= VGS, ID=250μA Forward Transconductance VDS= 10V, ID=3A 7 VGS=10V, ID=3A 85 100 VGS=4.5V, ID=3A 105 125 VGS(th) gfs RDS(ON) Static Drain-Source On-Resistance 2 60 0.5 V 1.0 1 μA 100 nA 2.5 V S mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=25V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 247 pF 34 pF 19.5 pF 6 nC 1 nC 1.3 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=4.5V, VDS=30V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=30V, 6 ns td(off) Turn-Off Delay Time RGEN=3.3Ω 15 ns td(r) Turn-On Rise Time ID=1A 15 ns td(f) Turn-Off Fall Time 10 ns ID=1.5A Source-Drain Diode Symbol VSD Test Condition Parameter Forward On voltage 2 Min Typ IS=3A，VGS=0V Max Units 1.3 V trr Reverse Recovery Time IS=3A,VGS=0V 21 ns Qrr Reverse Recovery Charge dI/dt=100A/ 19 nC Note 1: Pulse width limited by Max. junction temperature Note 2: Pulse test Note 3: Surface mounted on 1 1n2 copper pad of FR4 board; 270℃/W when mounted on min. copper pad ShangHai Sino-IC Microelectronic Co., Ltd. 2. SE6003C Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE6003C Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE6003C Package Outline Dimension TO-251 ShangHai Sino-IC Microelectronic Co., Ltd. 5. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 6.