LSH65R650HT

LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Lonten N-channel 650V, 7A, 0.65Ω LonFETTM Power MOSFET Description LonFET TM Product Summary Power MOSFET is fabricated using VDS @ Tj,max 700V RDS(on),max 0.65Ω device has extremely low on resistance, making it IDM 21A especially suitable for applications which require Qg,typ 13.1 nC advanced super junction technology. The resulting superior power density and outstanding efficiency. Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 13.1nC)  100% UIS tested  RoHS compliant TO-251 TO-252 TO-220 TO-220MF TO-263 D Applications TO-220NF  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Continuous drain current Value Unit 650 V 7 A 4.4 A 21 A VGSS ±30 V EAS 120 mJ IAR 7 A 63 W 0.5 W/°C 28 W 0.22 W/°C VDSS ( TC = 25°C ) ID ( TC = 100°C ) 1) Pulsed drain current IDM Gate-Source voltage Avalanche energy, single pulse 2) Avalanche current, repetitive 3) Power Dissipation TO-220 ( TC = 25°C ) - Derate above 25°C PD Power Dissipation TO-220MF/ TO-220NF 25°C ) ( TC = - Derate above 25°C Mounting torque To-220 ( M3 and M3.5 screws ) 60 Mounting torque To-220F ( M2.5 screws ) 50 Ncm Operating and Storage Temperature Range TJ, TSTG Continuous diode forward current Diode pulse current Version 4.0 2018 -55 to +150 °C IS 7 A IS,pulse 21 A 1 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Thermal Characteristics TO-251/TO-252/TO-220/TO-263 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 2 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Tsold 260 °C Value Unit Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Thermal Characteristics TO-220MF/ TO-220NF Parameter Symbol Thermal Resistance, Junction-to-Case RθJC 4.5 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W Tsold 260 °C Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Package Marking and Ordering Information Device Device Package Marking Units/Tube LSC65R650HT TO-220 LSC65R650HT 50 LSD65R650HT TO-220MF LSD65R650HT 50 LSDN65R650HT TO-220NF LSDN65R650HT 50 LSE65R650HT TO-263-2L LSE65R650HT 800 LSG65R650HT TO-252 LSG65R650HT 2500 LSH65R650HT TO-251 LSH65R650HT Electrical Characteristics Parameter Units/Tube 72 Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 650 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA 2.5 3.5 4.5 V Drain cut-off current IDSS VDS=650 V, VGS=0 V, μA Tj = 25°C - - 1 Tj = 125°C - 10 - Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 50 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -50 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=3.5 A - Tj = 25°C - 0.55 0.65 Ω Tj = 150°C - 1.43 - Gate resistance RG f=1 MHz, open drain - 5.7 - Input capacitance Ciss VDS = 25 V, VGS = 0 V, - 480 - Output capacitance Coss f = 1 MHz - 325 - Reverse transfer capacitance Crss - 0.95 - Turn-on delay time td(on) - 12 - Ω Dynamic characteristics Version 4.0 2018 VDD = 300V, ID = 3.5A 2 pF www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Rise time tr Turn-off delay time Fall time RG = 10Ω, VGS=15V - 6.13 - td(off) - 26 - tf - 3.3 ns - Gate charge characteristics Gate to source charge Qgs VDD=480 V, ID=3.5A, - 4.2 - Gate to drain charge Qgd VGS=0 to 10 V - 4.0 - Gate charge total Qg - 13.1 - Gate plateau voltage Vplateau - 5.1 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=3.5A - 0.85 - V Reverse recovery time trr VR=50 V, IF=3.5A, - 200 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 1.6 - μC Peak reverse recovery current Irrm - 12.5 - A Notes: 1. Limited by maximum junction temperature, maximum duty cycle is 0.75. 2. IAS = 2A, VDD = 50V, Starting Tj= 25°C. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Version 4.0 2018 3 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Electrical Characteristics Diagrams Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS=10V VGS=7V Common Source Tc = 25°C Pulse test Common Source Tc = 25°C VDS=20 V Pulse test Drain current ID (A) VGS=6.5V Drain current ID (A) VGS=6V VGS=5.5V Drain−source voltage VDS (V) Gate−source voltage VGS (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature 1.3 1.2 Vth , (Normalized) Gate threshold voltage RDS (on) (Ω) 1.1 VGS = 10V Tc = 25°C Pulse test 1 0.9 0.8 0.7 IDS=0.25 mA Pulse test 0.6 0.5 -60 Drain current ID (A) Figure 5. Breakdown Voltage vs. Temperature -20 0 20 40 60 80 100 120 140 160 Figure 6. On-Resistance vs. Temperature 2.5 RDS(on), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage -40 Junction temperature Tj (°C) 1.1 1 0.9 VGS=0 V IDS=0.25 mA Pulse test 0.8 0.7 2 1.5 1 VGS=10 V IDS=3.5 A Pulse test 0.5 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Version 4.0 2018 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction temperature Tj (°C) Junction temperature Tj (°C) 4 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characterist Gate-Source Voltage VGS (V) Capacitance (pF) Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Coss Notes: f = 1 MHz VGS=0 V ID = 3.5A Crss Total Gate Charge QG (nC) Drain-Source Voltage VDS (V) Figure 9.1 Maximum Safe Operating Area Figure 9.2 Maximum Safe Operating Area TO-220MF/TO-220NF TO-220/TO-251/TO-252/ TO-263 Limited by Rds(on) Drain current ID (A) Drain current ID (A) Limited by Rds(on) 100us 1ms DC Notes: TC=25℃ TJ=150℃ Single Pulse 1ms DC Notes: TC=25℃ TJ=150℃ Single Pulse Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 10.1 Power Dissipation vs. Temperature Figure 10.2 Power Dissipation vs. Temperature TO-220/TO-251/TO-252/ TO-263 Drain power dissipation PD (W) Drain power dissipation PD (W) TO-220MF/TO-220NF Case temperature Tc (°C) Version 4.0 10us 100us 2018 Case temperature Tc (°C) 5 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 4.0 2018 6 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Mechanical Dimensions for TO-251 COMMON DIMENSIONS MM SYMBOL MIN NOM MAX A 2.20 2.30 2.38 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b2 0.00 0.04 0.10 b2’ 0.00 0.04 0.10 b3 5.20 5.33 5.46 c 0.43 0.53 0.61 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.73 E1 4.63 — — e 2.286BSC H 16.22 16.52 16.82 L1 9.15 9.40 9.65 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 TO-251 Part Marking Information Lonten Logo Lonten LSH65R650HT ABYWW99 Part Number “AB” Foundry & Assembly Code “99” Manufacturing Code “YWW” Date Code Version 4.0 2018 7 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET COMMON DIMENSIONS Mechanical Dimensions for TO-252 mm SYMBOL MIN NOM MAX A 2.20 2.30 2.38 A1 0.00 — 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.46 c 0.43 0.53 0.61 D 5.98 6.10 6.22 D1 5.30REF E 6.40 E1 4.63 e 6.60 6.73 — — 2.286BSC H 9.40 L 1.38 10.10 10.50 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 — 1.28 L4 0.50 — 1.00 L5 1.65 1.80 1.95 θ 0° — 8° TO-252 Part Marking Information Lonten Logo Lonten LSG65R650HT ABYWW99 Part Number “AB” Foundry & Assembly Code “99” Manufacturing Code “YWW” Date Code Version 4.0 2018 8 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Mechanical Dimensions for TO-220 COMMON DIMENSIONS MM INCH SYMBOL MIN NOM MAX MIN NOM MAX A 4.37 4.57 4.70 0.172 0.180 0.185 A1 1.25 1.30 1.40 0.049 0.051 0.055 A2 2.20 2.40 2.60 0.087 0.094 0.102 b 0.70 0.80 0.95 0.028 0.031 0.037 b2 1.17 1.27 1.47 0.046 0.050 0.058 c 0.45 0.50 0.60 0.018 0.020 0.024 D 15.10 15.60 16.10 0.594 0.614 0.634 D1 8.80 9.10 9.40 0.346 0.358 0.370 D2 5.50 — — 0.217 — — E 9.70 10.00 10.30 0.382 0.394 0.406 E3 7.00 — — 0.276 — — e 2.54BSC 0.1BSC e1 5.08BSC 0.2BSC H1 6.25 6.50 6.85 0.246 0.256 0.270 L 12.75 13.50 13.80 0.502 0.531 0.543 L1 — 3.10 3.40 — 0.122 0.134 Øp 3.40 3.60 3.80 0.134 0.142 0.150 Q 2.60 2.80 3.00 0.102 0.110 0.118 TO-220 Part Marking Information Lonten Logo Lonten LSC65R650HT ABYWW99 Part Number “AB” Foundry & Assembly Code “99” Manufacturing Code “YWW” Date Code Version 4.0 2018 9 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Mechanical Dimensions for TO-220MF COMMON DIMENSIONS MM INCH SYMBOL E MIN NOM MAX MIN NOM MAX 9.96 10.16 10.36 0.392 0.400 0.408 A 4.50 4.70 4.90 0.177 0.185 0.193 A1 2.34 2.54 2.74 0.092 0.100 0.108 A2 0.30 0.45 0.60 0.012 0.002 0.024 A4 2.65 2.76 2.96 0.104 0.109 0.117 C 0.40 0.50 0.65 0.016 0.020 0.026 D 15.57 15.87 16.17 0.613 0.625 0.637 H1 6.70REF 0.264REF e 2.54BSC 0.1BSC ØP 3.03 3.18 3.38 0.119 0.125 0.133 L 12.68 12.98 13.28 0.499 0.511 0.523 L1 2.88 3.03 3.18 0.113 0.119 0.125 ØP3 3.15REF 0.124REF F3 3.15 3.30 3.45 0.124 0.130 0.136 G3 1.25 1.35 1.55 0.049 0.053 0.061 b1 1.18 1.28 1.43 0.046 0.050 0.056 b2 0.70 0.80 0.95 0.028 0.031 0.037 TO-220MF Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 4.0 2018 Lonten LSD65R650HT ABYWW99 Part Number “99” Manufacturing Code 10 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Mechanical Dimensions for TO-263 COMMON DIMENSIONS MM SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.37 4.57 4.77 0.172 0.180 0.188 A1 1.22 1.27 1.42 0.048 0.050 0.056 A2 2.49 2.89 2.89 0.098 0.114 0.114 A3 0.00 0.13 0.25 0.000 0.005 0.010 b 0.70 0.81 0.96 0.028 0.032 0.034 b1 1.17 1.27 1.47 0.046 0.050 0.058 c 0.30 0.38 0.53 0.012 0.015 0.021 D1 8.50 8.70 8.90 0.335 0.343 0.350 D4 6.60 — — 0.260 — — E 9.86 10.16 10.36 0.389 0.400 0.408 E5 7.06 — — 0.278 — — e 2.54 BSC 0.100 BSC H 14.70 15.10 15.50 0.579 0.594 0.610 H2 1.07 1.27 1.47 0.042 0.050 0.058 L 2.00 2.30 2.60 0.079 0.091 0.102 L1 1.40 1.55 1.70 0.055 0.061 0.067 L4 θ 0.25 BSC 0° 5° 0.010 BSC 9° 0° 0.197° 0.354° TO-263 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LSE65R650HT ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 4.0 2018 11 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Mechanical Dimensions for TO-220NF Lonten Logo Part Number “AB” Foundry & Assembly Code “99” Manufacturing Code “YWW” Date Code Version 4.0 2018 12 www.lonten.cc LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Jan. 2019 Revision 4.0 Version 4.0 2018 13 www.lonten.cc