TMU4N60H

TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA4N60H TO-220F A4N60H TMP4N60H TO-220 P4N60H TMU4N60H TO-251 U4N60H TMD4N60H TO-252 D4N60H Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Unit TO-220F Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage TO-220 TO-251 TO-252 VDSS 600 V ID 4 A IDM 16 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 160 mJ Avalanche Current (note1) IAR 4 A Repetitive Avalanche Energy (note1) EAR 20 mJ Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range PD 36 TJ, Tstg 75 W -55~+150 ºC Thermal Resistance Value Parameter Symbol Unit TO-220F TO-220 TO-251 Thermal Resistance, Junction-to-Case RthJC 3.47 1.67 Thermal Resistance, Junction-to-Ambient RthJA 62.5 60 TO-252 K/W V3.0 1 www.tsinghuaicwx.com TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 600 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 2.0A -- 1.8 2.2 Ω -- 580 -- -- 69.5 -- Dynamic Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 10.9 -- Total Gate Charge Qg -- 15 -- Gate-Source Charge Qgs -- 2.5 -- Gate-Drain Charge Qgd -- 7.5 -- Turn-on Delay Time td(on) -- 12 -- Turn-on Rise Time tr -- 22 -- Turn-off Delay Time td(off) -- 50 -- -- 48 -- -- -- 4 -- -- 16 Turn-off Fall Time VDD = 480V, ID = 4.0A, VGS = 10V VDD = 300V, ID =4.0A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 4.0A, VGS = 0V -- -- 1.4 V Reverse Recovery Time trr -- 250 -- ns Reverse Recovery Charge Qrr VGS = 0V,IS = 4.0A, diF/dt =100A /μs -- 3.5 -- μC Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% V3.0 2 www.tsinghuaicwx.com TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (TJ = 25ºC) Figure 2. Body Diode Forward Voltage 101 20V 10V 8V 7V 6V 5V 15 IS, Source Current (A) ID, Drain Current (A) 20 10 5 0 0 2 4 6 8 10 12 14 16 18 100 TJ = 150ºC TJ = 25ºC TJ = -55ºC 10-1 10-2 0.2 20 VDS, Drain-to-Source Voltage (V) 1 1.2 40 PD, Power Dissipation (w) 4 ID, Drain Current (A) 0.8 Figure 4. Power Dissipation vs. Temperature 4.5 3.5 3 2.5 2 1.5 1 0.5 35 30 25 20 15 10 5 0 0 25 50 75 100 125 0 150 0 TC, Case Temperature (A) Figure 5. Transfer Characteristics RDS(on), On-Resistance (Normalized) 10 8 TJ = 150ºC 6 4 2 0 0 2 4 6 40 60 80 100 Figure 6. On-Resistance vs. Temperature TJ = 25ºC 12 20 TC, Case Temperature (ºC) 14 ID, Drain Current (A) 0.6 VSD, Source-to-Drain Voltage (V) Figure 3. Drain Current vs. Temperature 8 10 VGS, Gate-to-Source Voltage (V) V3.0 0.4 2.5 VGS = 10V ID=4A 2.25 2 1.75 1.5 1.25 1 0.75 0.5 -50 0 50 100 150 TJ, Junction Temperature (ºC) 3 www.tsinghuaicwx.com TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 10 VGS, Gate-to-Source Voltage (V) Capacitance (pF) 104 Ciss 103 Coss 102 Crss 101 VGS = 0V f = 1MHz 100 0 10 20 30 VDD = 120V 8 VDD = 300V 6 VDD = 480V 4 2 0 40 0 3 VDS, Drain-to-Source Voltage (V) ZthJC, Thermal Impedance (K/W) ZthJC, Thermal Impedance (K/W) 12 15 101 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-3 10-6 10-5 10-4 10-3 10-2 10-1 10-7 10-6 10-5 10-4 10-3 10-2 10-1 Tp, Pulse Width (s) Tp, Pulse Width (s) V3.0 9 Figure 10. Transient Thermal Impedance TO-220, TO-251,TO-252 Figure 9. Transient Thermal Impedance TO-220F 10-7 6 Qg, Total Gate Charge (nC) 4 www.tsinghuaicwx.com TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V3.0 5 www.tsinghuaicwx.com TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company TO-220 V3.0 6 www.tsinghuaicwx.com TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company TO-220F V3.0 7 www.tsinghuaicwx.com TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company TO-252 V3.0 8 www.tsinghuaicwx.com TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company TO-251 V3.0 9 www.tsinghuaicwx.com TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. 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