IRLU024NPBF-VB

IRLU024NPBF www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) d 0.032 at VGS = 10 V 35 0.037 at VGS = 4.5 V 30 d 21.7 APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter D TO-251 G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Parameter Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °C Operating Junction and Storage Temperature Range c ID V 35 d IDM 30d 100 IAS 40 EAS 80 PD Unit 59.5 A mJ b 2.7 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 46 RthJC 2.1 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. 服务热线：400-655-8788 1 IRLU024NPBF www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. VDS VDS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VDS = 0 V, VGS = ± 20 V ± 250 VDS = 60 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS V 3.5 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 150 °C 250 ID(on) RDS(on) gfs VDS ≥ 10 V, VGS = 10 V 50 nA µA A VGS = 10 V, ID = 12 A 0.032 VGS = 4.5 V, ID = 10 A 0.037 VDS = 15 V, ID = 10 A 110 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec td(off) 281 pF 130 VDS = 30 V, VGS = 10 V, ID = 10 A 46 28 VDS = 30 V, VGS = 4.5 V, ID = 10 A nC 7 6.7 f = 1 MHz td(on) tr Timec 1100 VGS = 0 V, VDS = 30 V, f = 1 MHz VDD = 30 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf 0.4 2 4 8 16 9 18 35 53 9 18 Ω ns Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb IS 50 Pulsed Current Continuous Current ISM 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = 10 A, dI/dt = 100 A/µs A 0.75 1.5 V 34 51 ns 2 3 A 34 51 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 IRLU024NPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.070 50 V GS = 10 V thru 5V R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 20 V GS = 4 V 15 10 05 V GS = 4.5 V 0.040 V GS = 10 V 0.030 0.020 0 0.0 0.5 1.0 1.5 0 2.0 20 40 80 60 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) Drain to Source Voltage vs. ID On-Resistance vs. Drain Current 5 0.070 4 0.060 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 0.050 3 T C = 25 °C 2 1 100 0.050 T J = 150 °C 0.040 T J = 25 °C 0.030 T C = 125 °C T C = - 55 °C 0 0 1 2 3 4 0.020 2 5 4 6 8 10 V GS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 180 VGS - Gate-to-Source Voltage (V) g fs - Transconductance (S) ID = 10 A 135 T C = - 55 °C T C = 25 °C 90 T C = 125 °C 45 8 V DS = 30 V 6 V DS = 48 V V DS = 24 V 4 2 0 0 0 6 12 18 24 30 0 10 20 30 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge 40 50 服务热线：400-655-8788 3 IRLU024NPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.1 100 1.7 I S - Source Current (A) T J = 150 °C ID = 250 μA VGS(th) (V) 10 T J = 25 °C 1.3 1 0.9 0.1 0.0 0.3 0.6 0.9 0.5 - 50 1.2 0 25 50 75 100 V SD - Source-to-Drain Voltage (V) T J - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 125 150 175 125 150 175 43 V DS - Drain-to-Source Voltage (V) 1500 Ciss 1200 C - Capacitance (pF) - 25 900 600 Coss 300 41 ID = 250 μA 39 37 35 Crss 33 - 50 0 0 5 10 15 20 25 30 - 25 0 25 50 75 100 V DS - Drain-to-Source Voltage (V) T J - Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 50 2.0 ID = 10 A 30 V GS = 10 V I D - Drain Current (A) (Normalized) R DS(on) - On-Resistance 1.7 1.4 V GS = 4.5 V 1.1 Package Limited 10 05 0.8 0.5 - 50 20 0 - 25 0 25 50 75 100 125 150 175 0 25 50 75 100 T J - Junction Temperature (°C) T C - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 150 服务热线：400-655-8788 4 IRLU024NPBF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 20 Limited by R DS(on)* TJ = 150 °C I D - Drain Current (A) I DAV (A) 20 TJ = 25 °C 10 100 μA 10 1 ms 10 ms 100 ms 1 s, 10 s, DC 1 0.1 1 10-6 10-5 10-4 10-3 10-2 10-1 T C = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Time (s) Single Pulse Avalanche Current Capability vs. Time Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 IRLU024NPBF www.VBsemi.com TOĆ251AA (DPAK) E A L2 b2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 e c A1 INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 8.89 9.53 0.350 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 Note: Dimension L3 is for reference only. 服务热线：400-655-8788 6 IRLU024NPBF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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