AP50N06Y

AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=60V ID =50A RDS(ON) < 20mΩ @ VGS=10V （Type：14mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP50N06Y TO-251L-3L AP50N06Y XXXX YYYY 4000 AP50N06Y TO-251S-3L AP50N06Y XXXX YYYY 4000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 50 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 25 A IDM Pulsed Drain Current2 90 A 39.2 mJ EAS IAS Single Pulse Avalanche Energy3 Avalanche Current A PD@TC=25℃ Total Power 45 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 62 ℃/W 2.8 ℃/W RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 AP50N06Y RVE1.1 Thermal Resistance 1 永源微電子科技有限公司 1 28 Dissipation4 AP50N06Y 60V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 65 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=20A --- 14 20 VGS=4.5V , ID=10A --- 18 25 VGS(th) Gate Threshold Voltage 1.2 1.8 2.5 V --- -5.68 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 45 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 --- Ω Qg Total Gate Charge (4.5V) --- 19.3 --- Qgs Gate-Source Charge --- 7.1 --- Qgd Gate-Drain Charge --- 7.6 --- Td(on) Turn-On Delay Time --- 7.2 --- Tr Rise Time --- 50 --- Td(off) Turn-Off Delay Time --- 36.4 --- Tf Fall Time --- 7.6 --- Ciss Input Capacitance --- 2423 --- Coss Output Capacitance --- 145 --- Crss Reverse Transfer Capacitance --- 97 --- --- --- 35 A --- --- 80 A --- --- 1 V --- 16.3 --- nS --- 11 --- nC IS ISM VSD trr Continuous Source Pulsed Source Current1,5 Current2,5 Diode Forward Voltage2 Reverse Recovery Time VDS=48V , VGS=4.5V , ID=15A VDD=30V , VGS=10V , RG=3.3 , ID=15A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=A , TJ=25℃ IF=15A,dI/dt=100A/µs ,TJ=25℃ Qrr Reverse Recovery Charge Note : 1、he data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. uA nC ns pF 2、he data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、he EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A 4、he power dissipation is limited by 150℃ junction temperature 5、he data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation 2 AP50N06Y RVE1.1 永源微電子科技有限公司 AP50N06Y 60V N-Channel Enhancement Mode MOSFET 3 AP50N06Y RVE1.1 永源微電子科技有限公司 AP50N06Y 60V N-Channel Enhancement Mode MOSFET 4 AP50N06Y RVE1.1 永源微電子科技有限公司 AP50N06Y 60V N-Channel Enhancement Mode MOSFET Package Mechanical Data-TO-251L-3L 5 AP50N06Y RVE1.1 永源微電子科技有限公司 AP50N06Y 60V N-Channel Enhancement Mode MOSFET Package Mechanical Data-TO-251S-3L L1 0.9 Common mm Nom 2.3 1.0 0.76 0.52 6.6 5.3 4.8 ---6.1 5.400REF 2.286BSC 4.0 --- L2 1.4 --- Symbol A A1 b C D D1 D2 E E1 E2 e L Mim 2.2 0.9 0.66 0.46 6.50 5.15 4.6 10.4 6.0 3.5 Max 2.4 1.1 0.86 0.58 6.7 5.45 4.95 11.5 6.2 4.3 1.27 1.9 6 AP50N06Y RVE1.1 永源微電子科技有限公司 AP50N06Y 60V N-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. = 7 AP50N06Y RVE1.1 永源微電子科技有限公司 AP50N06Y 60V N-Channel Enhancement Mode MOSFET Edition Date Change Rve1.0 2020/1/31 Initial release Rve1.1 2021/8/35 New profile Copyright Attribution“APM-Microelectronice” 8 AP50N06Y RVE1.1 永源微電子科技有限公司