MD57E33QC3

MD57E33QC3

  • 厂商:

    MD(明达微)

  • 封装:

    SOT23-5

  • 描述:

    3.3V 300MA 5.5V

  • 数据手册
  • 价格&库存
MD57E33QC3 数据手册
High-PSRR Low-Noise RF LDO MD57XX Series CMOS Voltage Regulator With ON/OFF Switch 300mA The MD57XX series is a low-noise LDO that can supply up to 300 mA output current. Designed to meet the requirements of RF and analog circuits, the MD57XX series device provides low noise, high PSRR, low quiescent current, and low line or load transient response figures. Using new innovative design techniques, the MD57XX series offers ultra-low noise performance without a noise bypass capacitor and the ability for remote output capacitor placement. response figures with a 1-µF input and a 1-µF output ceramic capacitor ■ Features:             Input Voltage Range: 2.2 V to 5.5 V Output Voltage Range: 1.2 V to 4.5 V Stable With 1-µF Ceramic Input and Output Capacitors No Noise Bypass Capacitor Required Remote Output Capacitor Placement Current Limiter and Over Temperature Protection -40°C to 125°C Operating Junction Temperature Low Output Voltage Noise: 20µVRMS High PSRR: 90dB@1kHz Output Voltage Tolerance: ±2% Low quiescent Current: 20uA Low Dropout Voltage: 120mV@300mA ■         Applications: Mobile Phones, Tablets Digital Cameras and Audio Devices Portable and Battery-Powered Equipment Portable Medical Equipment Smart Meters and Field Transmitters RF, PLL, VCO, and Clock Power Supplies IP Cameras Drones ■ Typical Application: VIN + CE DC - VOUT GND CIN=1.0μF + MD57XX VOUT COUT=1.0μF - MD57XX Series High-PSRR Low-noise RF LDO ■ Pin Configuration (Top View): SOT 23-5L VOUT NC 5 4 DFN1*1-4L VIN EN 4 3 EP 5 1 VOUT 2 1 GND VIN 2 3 GND EN ■ Product Selections: Product Name VOUT (V) Package Ordering Name MD5712 MD5715 MD5718 MD5721 MD5725 MD5728 MD5730 MD5733 MD5736 MD5712 MD5715 MD5718 MD5721 MD5725 MD5728 MD5730 MD5733 MD5736 1.2 1.5 1.8 2.1 2.5 2.8 3.0 3.3 3.6 1.2 1.5 1.8 2.1 2.5 2.8 3.0 3.3 3.6 DFN1*1-4L DFN1*1-4L DFN1*1-4L DFN1*1-4L DFN1*1-4L DFN1*1-4L DFN1*1-4L DFN1*1-4L DFN1*1-4L SOT23-5L SOT23-5L SOT23-5L SOT23-5L SOT23-5L SOT23-5L SOT23-5L SOT23-5L SOT23-5L MD57E12WB6 MD57E15WB6 MD57E18WB6 MD57E21WB6 MD57E25WB6 MD57E28WB6 MD57E30WB6 MD57E33WB6 MD57E36WB6 MD57E12QC3 MD57E15QC3 MD57E18QC3 MD57E21QC3 MD57E25QC3 MD57E28QC3 MD57E30QC3 MD57E33QC3 MD57E36QC3 Marking 5712 5715 5718 5721 5725 5728 5730 5733 5736 5712 5715 5718 5721 5725 5728 5730 5733 5736 Package Information Tape and Reel, 10000pcs Tape and Reel, 3000pcs Notes: 1* Customer can request to customize the output voltage ranged from 1.2V to 4. 5V if desired voltage is not found in the selections. 2* Customer can request customization of package choice. 3* Please pay attention to the MARKING of the product package type. 2 / 12 MD57XX Series High-PSRR Low-noise RF LDO ■ Ordering Information MD57 ①②③④⑤⑥⑦ e.g. MD57E33QC3 DESIGNATOR ITEM SYMBOL DESCRIPTION VOUT NC 5 4 VIN EN 4 ① PIN Configuration E 3 EP 5 1 1 VIN ②③ ④ ⑤ ⑥ ⑦ 2 GND EN VOUT GND e.g. 1.8V→②=1, ③=8 SOT23 Packages Type DFN Packages Count e.g. A=3, B=4, C=5 ~ 0=100, 1=1000, 2=2500, Minimum Packing Quantity 0~6 3=3000, 4=4000, 5=5000, 6=10000 Customer can request customization of product Output Voltage 18~ Q W A~Z ■ Absolute Maximum Ratings: (Unless otherwise indicated: Ta=25℃) PARAMETER SYMBOL RATINGS UNITS Input Voltage VIN -0.3 ~ 6.0 Output Voltage VOUT -0.3 ~ VIN+0.3V Power Dissipation PD Thermal Resistance RθJB (1) Operating Ambient Temperature Topr -40 ~ +85 Storage Temperature Tstg -40 ~ +125 ESD Protection ESD HBM 6000 SOT23-5L 250 DFN1*1-4L 200 SOT23-5L 180 DFN1*1-4L 160 Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. (1) 2 3 Mounted on JEDEC standard 4layer (2s2p) PCB test board ■ Notes on Use: Input Capacitor (CIN): 1.0µF above Output Capacitor (COUT):1.0µF above 3 / 12 V mW ℃/W ℃ V MD57XX Series High-PSRR Low-noise RF LDO ■ Electrical Characteristics: MD57XX Series PARAMETER SYMBOL Output Voltage VOUT(S) Dropout Voltage*1 Line Regulation Line Transient VDROP ΔVOUT ΔVIN • VOUT(s) VOUT_Line Load Regulation VOUT2 Load Transient VOUT_Load Temperature Stability ΔVOUT Ta • VOUT(s) GND Current (VEN=VIN) IGND Shutdown Current ISHUT Input Voltage Maximum Output Current VIN (Unless otherwise indicated:Ta=25℃) CONDITIONS VIN=VOUT(S)+2.0V IOUT=1mA, VOUT(S)<2.0V VIN=VOUT(S)+1.0V IOUT=1mA, VOUT(S)≥2.0V VEN=VIN, VOUT<3V IOUT=300mA VEN=VIN, VOUT≥3V IOUT=300mA MIN. VOUT(S)-0.03 VOUT(S)0.98 V VOUT(S)1.02 130 mV 120 0.02 0.1 %/V -1 mV 1 10 20 -40 40 VIN=VEN=VOUT(S)+1.0V IOUT=1mA , -40℃≤Ta≤125℃ ±100 no load 20 IOUT=300mA 470 VIN=5.5V, VEN=0 0.01 2.2 IOUTMAX UNIT VOUT(S)+0.03 IOUT=300mA to 1mA in 10µs --- MAX. VOUT(S) VOUT(S)+1.0V≤VIN=VEN≤5.5V IOUT=10mA VIN= VOUT+1V to VOUT+2V in 30us VIN= VOUT+2V to VOUT+1V in 30us VIN=VEN=VOUT(S)+1.0V 1mA≤IOUT≤300mA IOUT=1mA to 300mA in 10µs TYP. 250 mV mV ppm/℃ 30 µA µA 0.1 µA 5.5 V 300 mA Current Limit*2 ILIM VIN=VEN=VOUT(S)+1.0V VOUT = 0.95 ×VOUT(S) 500 mA COUT Auto Discharge RDCHG VEN=0, VOUT=VOUT(S) 240 Ω f=1kHz, IOUT=20mA 94 Power Supply Rejection Ratio PSRR Output noise voltage eN Start-Up Time TSTART Overshoot on Start-Up EN ‘H’ Level Voltage EN ‘L’ Level Voltage EN ‘H’ Level Current EN ‘L’ Level Current Over Temperature Protection VOUT_Start-up f=10kHz, IOUT=20mA 72 f=100kHz, IOUT=20mA 77 f=1MHz, IOUT=20mA 53 IOUT=20mA 20 From VEN>VENH to VOUT=95% of VOUT Stated as a percentage of VOUT(S) 80 dB µVRMS 150 µs 5 % VENH --- 0.85 5.5 VENL --- 0 0.35 IENH VIN=5.5V, VEN =VIN -0.1 0.1 IENL VIN=5.5V, VEN =0 -0.1 0.1 OTP IOUT=1mA V µA Notes: 1. VDROP=VIN1 -(VOUT(S)× 0.98)where VIN1 is the input voltage when VOUT = VOUT(S)× 0.98. 2. ILIM: Output current when VIN=VOUT(S)+1V and VOUT = 0.95*VOUT(S). 4 / 12 155 ℃ MD57XX Series High-PSRR Low-noise RF LDO ■ Typical Performance Characteristics: Test Conditions: VIN=4.3V, VOUT=3.3V, CIN=1.0μF, COUT=1.0μF, Ta=25℃, unless otherwise indicated. Supply Current vs. Input Voltage VEN Thresholds vs. Input Voltage Output Voltage vs. Temperature Supply Current vs. Temperature Output Voltage vs. Input Voltage GND Current vs. Output Current 5 / 12 MD57XX Series High-PSRR Low-noise RF LDO ■ Typical Performance Characteristics (Continued): Test Conditions: VIN=4.3V, VOUT=3.3V, CIN=1.0μF, COUT=1.0μF, Ta=25℃, unless otherwise indicated. Dropout Voltage vs. Output Current Output Voltage vs. Output Current Ch1=VOUT Ch1=VOUT Offset=4.3V Ch2=VIN Ch4=IOUT Line Transient: Load Transient: (IOUT=10mA) (IOUT=0mA~300mA~0mA) Ch1=VOUT Ch1=VOUT Ch2=VEN Ch2=VEN EN Enable: EN Enable: (IOUT=0mA) (IOUT=300mA) 6 / 12 MD57XX Series High-PSRR Low-noise RF LDO ■ Typical Performance Characteristics (Continued): Test Conditions: VIN=4.3V, VOUT=3.3V, CIN=1.0μF, COUT=1.0μF, Ta=25℃, unless otherwise indicated. Power Supply Rejection Ratio Noise Density Test 7 / 12 MD57XX Series High-PSRR Low-noise RF LDO ■ Detailed Description: 1. Overview Using new innovative design techniques, the MD57XX series offers ultra-low noise performance without the need for a separate noise filter capacitor. The MD57XX series is designed to perform with a single 1-µF input capacitor and a single 1-µF ceramic output capacitor. With a reasonable PCB layout, the single 1-µF ceramic output capacitor can be placed up to 10 cm away from the MD57XX series device. 2. Functional Block Diagram VOUT VIN EN POR - EN - + RF CF RAD + + - VBG 1.2V + EN EN EN 1MΩ + - VIH GND 8 / 12 MD57XX Series High-PSRR Low-noise RF LDO ■ Feature Description 1. Enable (EN) The MD57XX series EN pin is internally held low by a 1-MΩ resistor to GND. The EN pin voltage must be higher than the VENH threshold to ensure that the device is fully enabled under all operating conditions. The EN pin voltage must be lower than the VENL threshold to ensure that the device is fully disabled and the automatic output discharge is activated. 2. Low Output Noise Any internal noise at the MD57XX series reference voltage is reduced by a first order low-pass RC filter before it is passed to the output buffer stage. The low-pass RC filter has a –3 dB cut-off frequency of approximately 0.1 Hz. 3. Output Automatic Discharge The MD57XX series output employs an internal 240-Ω (typical) pulldown resistance to discharge the output when the EN pin is low, and the device is disabled 4. Remote Output Capacitor Placement The MD57XX series requires at least a 1-µF capacitor at the OUT pin, but there are no strict requirements about the location of the capacitor in regards the OUT pin. In practical designs, the output capacitor may be located up to 10 cm away from the LDO. 5. Over Temperature Protection (OTP) Over temperature protection disables the output when the junction temperature rises to approximately 160°C which allows the device to cool. When the junction temperature cools to approximately 135°C, the output circuitry enables. Based on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This thermal cycling limits the dissipation of the regulator and protects it from damage as a result of overheating. The over temperature protection circuitry of the MD57XX series has been designed to protect against temporary thermal overload conditions. The OTP circuitry was not intended to replace proper heat-sinking. Continuously running the MD57XX series device into thermal shutdown may degrade device reliability. 9 / 12 MD57XX Series High-PSRR Low-noise RF LDO ■ Application and Implementation The MD57XX series is designed to meet the requirements of RF and analog circuits, by providing low noise, high PSRR, low quiescent current, and low line or load transient response figures. The device offers excellent noise performance without the need for a noise bypass capacitor and is stable with input and output capacitors with a value of 1 µF. The MD57XX series delivers this performance in industry standard packages such as SOT23-5, for this device, are specified with an operating junction temperature (T J) of –40°C to 125°C. 1. Typical Application As the figure shows the typical application circuit for the MD57XX series. Input and output capacitances may need to be increased above the 1 µF minimum for some applications. VIN + CE VOUT DC - + MD57XX GND VOUT COUT=1.0μF CIN=1.0μF - 2. Design Requirements DESIGN PARAMETER Input voltage range Output voltage Output current Output capacitor range Input/Output capacitor ESR range EXAMPLE VALUE 2.2 V to 5.5 V 1.8 V 300 mA 1 µF to 10 µF 5 to 500 mΩ Notes: 1. If the impedance of the power supply is high, which is caused by forgetting installing input capacitor or installing too small value capacitor, the oscillation may occur. 2. Pay attention to the operation conditions of input and output voltage and load current, such that the power consumption in the IC should not exceed the allowable power consumption of the package even though the chip has short circuit protection. 3. IC has a built-in anti-static protection (ESD) circuit, but please do not add excessive stress to the IC. 10 / 12 MD57XX Series High-PSRR Low-noise RF LDO ■ Packaging Information 11 / 12 MD57XX Series High-PSRR Low-noise RF LDO ■ Packaging Information (Continued) DFN(1*1)-4L PACKAGE OUTLINE DIMENSIONS For the newest datasheet, please see the website: www.md-ic.com.cn Version V1.0: 20200528 12 / 12
MD57E33QC3 价格&库存

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MD57E33QC3
  •  国内价格
  • 5+0.66658
  • 50+0.52972
  • 150+0.46138
  • 500+0.41006
  • 3000+0.32271
  • 6000+0.30214

库存:453