ES1222LSO

 The ES1222 is a Latch Hall effect sensor IC RoHS Compliant: (EU)2015/863 fabricated from BCD technology. The device integrates a voltage regulator, Hall sensor with dynamic offset cancellation system, Schmitt trigger and an open-drain  Automotive, Consumer and Industrial output driver with over-current protection, all in a single  Solid-state switch package.  Brushless DC motor commutation It incorporates advanced chopper stabilization  Speed detection techniques to provide accurate and stable magnetic  Linear position detection switch points. There are many applications for this  Angular position detection sensor in addition to those listed above. The design,  Proximity detection specifications and performance have been optimized for commutation applications in 5V to 12V brushless DC motors. Thanks to its wide operating voltage range and extended choice of temperature range, it is quite suitable for use in automotive, industrial and consumer applications. The device is delivered in a Small Outline Transistor (SOT/DFN) for surface mount process and in a Plastic Single In Line (TO-92 flat) for through- hole mount. Both 3-lead packages are RoHS compliant. ES1222 SO Pin No. UA Pin No. Name Type Function 1 1 VDD Supply Supply Voltage Pin 2 3 OUT Output Open Drain Output Pin 3 2 GND Ground Ground Pin  Operating voltage range from 2.8V to 24V  High magnetic sensitivity – +/-15GS  BCD technology  -28V Reversed Power Supply Protection  -40℃~150℃ Operating Temperature  Output Limiting Current Protection  Output driver with internal pull-up resistor on) when a magnetic field perpendicular to the Hall  ESD sensor exceeds the operate point threshold, BOP. After The ES1220 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to operate properly. The OUT pin of these devices switches low (turns 4KV turn-on, the output voltage is VDSon. Note that the device www.innosensor.com 1 V1.2.2021 latches, that is, a south pole of sufficient strength towards the branded surface of the device turns the device on. The device remains on if the south pole is removed (B→0). This latching property defines the device as a magnetic memory. Based on BCD technology, InnoSen ES1220 is a Hall-effect device with high magnetic sensitivity. This multi-purpose latch suits most of the application requirements. The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more stable When the magnetic field is reduced below the release point, BRP, the OUT pin turns off (goes high). magnetic characteristics and enables faster and more precise design. The difference in the magnetic operate and release points is the hysteresis, BHYS, of the device. This built-in hysteresis prevents output oscillation near the switching point, and allows clean switching of the output even in the presence of external mechanical vibration and electrical noise. The operating voltage from 2.8V to 24V, low current consumption and large choice of operating temperature range according to “L”, and “E” specification make this device suitable for automotive, industrial and consumer applications. The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). Parameter Symbol Value Units Supply Voltage VDD 42 V Reverse Battery Voltage VRCC -42 mA Output Voltage VOUT 42 V Continuous Output Current IOUT 30 mA Operating Temperature Range TO -40 ~ 150 ℃ Storage Temperature Range TS -50 ~ 150 ℃ Maximum Junction Temperature TJ 165 ℃ Output clamp current Iocp 60 mA The electrostatic capacity ESD 4 KV Symbol Value Units Temperature Suffix “E” TA -40 ~ 85 ℃ Temperature Suffix “L” TA -40 ~ 150 ℃ This means magnetic fields with equivalent strength and opposite direction drive the output high and low. Powering-on the device in the hysteresis region Operating Temperature Range (less than BOP and higher than BRP) allows an indeterminate output state. The correct state is attained after the first excursion beyond BOP or BRP. The SOT-23 device is reversed from the UA and DFN package. The SOT-23 output transistor will be latched on in the presence of a sufficiently strong North pole magnetic field applied to the marked face. www.innosensor.com Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum- rated conditions for extended periods may affect device reliability. 2 V1.2.2021 DC Operating Parameters Ta = 25℃，VDD= 3V to 24V Parameter Symbol Test Conditions Min Typ Supply Voltage VDD Operating 2.8 Supply Current IDD B < BRP Output Saturation Voltage VDSon IOUT = 20mA, B > BOP Output Leakage Current IOFF B BOP Low B < BRP High ES1222 Performance Characteristics It is strongly recommended that an external bypass capacitor be connected (in close proximity to the Hall sensor) between the supply (VDD Pin) and www.innosensor.com 3 V1.2.2021 0.75 1.52 ± 0.02 1．96 3° ± 1° 0．89 45° ± 1° 4.0 ± 0.1 3.90 3 4 3 1 2 3 6° ±1° 3° ± 1° 6° ±1° Notes: 14.5 ± 1 2 1 2 3 3° ± 1° 1.6 0.05 ± 0.05 3.90 0.39 1 2 3 3.0 ± 0.1 ES22 xxxx 0.44 3.90 2 3 1 4 2 3 Sensor Location 3 1 2 3 Active Area Depth: 0.84(Nom) 1 2 3 1). Controlling dimension: mm; 2). Leads must be free of flash and plating voids; 3). Do not bend leads within 1 mm of lead to package interface; 4). PINOUT: Pin 1 VDD Pin 2 GND Pin 3 Output Marking: ES22 -- Code of Device (ES1222); 1.27 www.innosensor.com XXXX -- Production Lot; 4 V1.2.2021 Top View Notes: 1). PINOUT: Pin 1 VDD Pin 2 Output Pin 3 GND 2). All dimensions are in millimeters; 3 22XXX 1 1.50 2.65 1.70 2.95 Marking: 22 -- Code of Device (ES1222); XXX -- Production Lot; 2 1.80 2.00 Side View End View 2.82 3.02 0.10 0.20 3.00 1.05 1.15 3.00 0.70 0.90 3.00 0.00 0.10 3.00 0.30 0.50 3.00 0.30 0.60 3.00 Bottom View of SOT-23 Package 3 Chip 0.56 0.66 0.85 0.75 2 3 www.innosensor.com 1 2 1.50 3 1.40 5 V1.2.2021 22XXX Part No. Temperature Suffix Package Code SO (SOT23-3L) E ( -40℃ ~ 85℃) DF(DFNWN1616-6L) UA (TO-92S) ES1222 SO (SO23T-3L) L ( -40℃ ~ 150℃) DF(DFNWB1616-6L) UA (TO-92S) www.innosensor.com 6 V1.2.2021