GH1120KSE

Data Sheet GH1120 HALL EFFECT LATCH FOR HIGH TEMPERATURE ‹ Product Description ‹ Features The GH112 0 is a Hall-effect latch designed in CMOS technology. The IC internally includes a voltage regulator, Hall sensor with dynamic offset cancellation system, Schmitt trigger and an open-drain output driver. With no magnetic field present, the output is in the “on” state(Low). While the magnetic flux density(B) is larger than operate point(Bop),the output will be turned off(High) and the output is latched “off” state until the magnetic flux density (B) is lower than release point(Brp),then turn on(Low). It has wide operating voltage range and extended choice of temperature range, it is quite suitable for use in automotive, industrial and consumer applications. z 3.5V to 24V DC Operation Voltage z CMOS Technology z Chopper-stabilized amplifier stage 25mA Output Sink Current Operating Temperature: −40~ +125℃ z z z High Magnetic Sensitivity: Bhys=60Gauss(Typ.) z Lead Free Package: SIP-3L and SC59 (Commonly known as TO-92S and SOT-23-3L in Asia) z Lead Free Finish/RoHS Compliant ‹ Application z z z z IA IB Rotor Position Sensing Current Switch Encoder RPM Detection M Digital Hall Effect Sensor IC Driver M: Three Phase Hall Motor Ia Ib Ic & Control Logic HA RPM sensing HB HC Hall Motor Driver Fig.1 Functional Application Circuit in 3-Phase Hall Motor Feb 29. 2016 Rev. 1. 0 GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD. 1 Data Sheet GH1120 HALL EFFECT LATCH FOR HIGH TEMPERATURE ‹ Pin Description Table Pin definition and description for SIP-3L(TO-92S) PIN # NAME P/I/O 1 VDD P Input Power Supply 2 GND P Ground 3 OUT O Output Stage of Open Drain Table ‹ 1-1 1-2 Pin definition FUNCTION DESCRIPTION and description for SC59(SOT-23-3L) PIN # NAME P/I/O FUNCTION DESCRIPTION 1 VDD P Input Power Supply 2 OUT O Output Stage of Open Drain 3 GND P Ground Pin Configuration (Top View) SIP-3L(TO-92S) SC59(SOT-23-3L) 3 1 1 2 2 3 Feb 29. 2016 Rev. 1. 0 GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD. 2 Data Sheet GH1120 HALL EFFECT LATCH FOR HIGH TEMPERATURE ‹ Absolute Maximum Rating (Note 1)  SYMBOL PARAMETER VDD RATING Supply Voltage Vout (off) Voltage Io (sink) +28VDC externally applied to +28VDC max, OFF condition only output -0.5 V min., OFF or ON condition Output “ON” Current PD Power Dissipation 50 mA 450mW(SIP-3L);230mW(SC59) Top Operation Temperature Range -40 to +125 ℃ Tst Storage Temperature Range -65 to +150 ℃ Magnetic Flux No limit. B Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. ‹ Electrical Characteristics SYMBOL VDD VO (SAT) (TA = 25℃) PARAMETER CONDITIONS MIN Supply Voltage Operating Output Saturation Voltage VDD = 12V, OUT ”ON”, Io = 10mA TYP 3.5 VDD = 12V, OUT ”ON”, Io = 20mA IDD UNIT 24 V 300 mV 500 mV 5.0 mA 10 μA μ VDD =3.5~24V, Supply Current 2.0 OUT ”OFF” Output Leakage Current ILE ‹ MAX (Leakage into sensor output) Released Tr Output Switching Rise Time RL=820Ω, CL=20pF 0.45 μS Tf Time Fall Time RL=820Ω, CL=20pF 0.45 μS I SW F Maximum Switching Frequency Magnetic Characteristics PARAMETER SYMBOL Bop Operation Point Brp Release Point Bhy Hysteresis 10 KHz (TA = 25℃, VDD=12V) MIN. TYP. MAX. UNIT 5 30 80 Gauss -80 -30 -5 Gauss 30 60 90 Gauss Feb 29. 2016 Rev. 1. 0 GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD. 3 Data Sheet GH1120 HALL EFFECT LATCH FOR HIGH TEMPERATURE ‹ Functional Block Diagram Vdd Regulator OUT 2 Hall plate Amp GND Figure 1. Function Block Diagram of GH1120 ‹ Operating Characteristics Vout (Output Voltage)   S S Marking side Marking side N N Vd High Bhy Low SC59(SOT-23-3L) SIP-3L(TO-92S) Vcc VSAT Brp 0 Bop (Magnetic Flux Density) Figure 2. Operating Characteristics of GH1120 Table 2: Switching Function Parameter Pole OUT (SC59/SOT-23-3L) South Pole BBOP Low Feb 29. 2016 Rev. 1. 0 Pole OUT (SIP-3L/TO-92S) B>BOP B