SR3100

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD SCHOTTKY BARRIER RECTIFIER SR320 THRU SR3100 DO-201AD(DO-27) FEATURES     Low forward voltage drop Low leakage current High forward surge capability High reliability 1.0(25.4) MIN. .052(1.3) DIA. .048(1.2) .375(9.5) .335(8.5) MECHANICAL DATA      .220(5.6) DIA. .197(5.0) Case: DO-27,Mold plastic Epoxy: UL94V-0 rate flame retardant Polarity: Indicated by cathode band Lead:MIL-STD-202E, Method 208 guaranteed Mounting position: Any 1.0(25.4) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ambient temperature unleSR otherwise specified  Single Phase, half wave, 60Hz, resistive or inductive load  For capacitive load derate current by 20% SYMBOLS SR320 SR330 SR340 SR350 SR360 SR380 SR3100 UNITS Maximum Repetitive Peak Reverse Voltage VRRM 20 30 40 50 60 80 100 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 Volts Maximum Average Forward Rectified Current I(AV) 3.0 Amps  Peak Forward Surge Current 8.3mS single half sine-wave superimposed on rated load (JEDEC method) IFSM Maximum Instantaneous Forward Voltage at 3.0A VF Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (NOTE 1) Typical Thermal Resistance (NOTE 2) Operating Temperature Range Storage Temperature Range TA = 25℃ TA = 100℃ 80 0.55 Amps 0.70 1.0 20 250 20 -55 to +125 -55 to +150 IR CJ RθJA T J, TSTG Notes: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. 2.Thermal Resistance from Junction to Ambient at. 375”(9.5mm)lead length, P.C. board mounted. 1 0.85 Volts mA pF ℃/W ℃ ℃ SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD SCHOTTKY BARRIER RECTIFIER SR320 THRU SR3100 FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) 2.5 2.0 1.5 1.0 0.5 0 INSTANTANEOUS FORWARD CURRENT, (A) 120 60Hz Resistive or Inductive Load 0.375"(9.5mm) Lead Length 0 100 25 50 75 100 125 150 20 1 10 100 FIG.4-TYPICAL REVERSE CHARACTERISTICS 1000 0 35 SR 1 -S 20 R3 -S 4 R3 0 60 3 SR 80 0 10 R3 -S 0.1 0.2 0.4 0.6 0.8 1.0 1.2 TJ=25°C f=1.0MHz Vsig =50m Vp-p 100 1.0 10 10 TJ =100°C 1.0 TJ =75°C 0.1 TJ =25°C 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) FIG.5-TYPICAL JUNCTION CAPACITANCE 1000 100 0.01 INSTANTANEOUS FORWARD VOLTAGE,(V) JUNCTION CAPACITANCE, (pF) 40 FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 3 SR 10 0.1 60 NUMBER OF CYCLES AT 60 Hz TJ=25°C Pulse Width=300us 1% Duty Cycle 0 T A=25℃ 8.3ms Single Half Sine-Wave 80 LEAD TEMPERATURE, (°C) 10 0.01 100 0 175 INSTANTANEOUS REVERSE CURRENT, (μA) AVERAGE FORWARD CURRENT, (A) 3.0 100 REVERSE VOLTAGE,(V) 2